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Doping modification method for CVD (Chemical Vapor Deposition) ZnS crystal material

A crystal material, modification technology, applied in the direction of polycrystalline material growth, crystal growth, diffusion/doping, etc., can solve the problem of optical system application, reduce corrosion resistance, thermal shock resistance, poor mechanical properties and mechanical properties and other problems to achieve the effect of enhancing mechanical and mechanical properties, improving corrosion resistance, and enhancing mechanical properties

Active Publication Date: 2017-09-01
YUNNAN KIRO CH PHOTONICS
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  • Abstract
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Problems solved by technology

[0003] However, for CVDZnS crystal materials, more attention is focused on improving its optical properties, while ignoring its mechanical and mechanical properties.
CVDZnS crystal materials have poor mechanical properties and mechanical properties. In fact, the properties of ZnS materials grown by CVD process have not been improved during the deposition process. Studies have shown that when CVDZnS is subjected to heat treatment such as annealing or hot isostatic pressing Afterwards, although its transmittance in the visible light, near-infrared and mid-infrared bands has been significantly improved, the treatment process also leads to the increase of the grains in the ZnS crystal material, making it more soft, hard and bending strength, etc. The mechanical and mechanical properties are reduced, thereby reducing its corrosion resistance and thermal shock resistance, which seriously affects the application of its optical system in high-speed flight and in various harsh environmental conditions

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  • Doping modification method for CVD (Chemical Vapor Deposition) ZnS crystal material
  • Doping modification method for CVD (Chemical Vapor Deposition) ZnS crystal material

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Embodiment Construction

[0019] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0020] The invention provides a device for uniformly depositing CVDZnS bulk materials on both sides, and proposes to use the innovative deposition substrate structure and nozzle structure to control the air flow from bottom to top and then guide the flow from top to bottom by vacuuming from the bottom of the deposition space , so that zinc vapor and hydrogen sulfide gas are evenly mixed and uniformly deposited along both sides of the deposition substrate, and nine pieces of 300×300×15 mm zinc sulfide polycrystalline bulk materials with uniform optical quality and uniform thickness can be prepared at on...

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Abstract

The invention discloses a doping modification method for a CVD (Chemical Vapor Deposition) ZnS crystal material. The doping modification method comprises the following steps: before deposition, adding a metal M into a zinc crucible, or an alloy Zn-M of M and zinc as a doping agent, performing heating melting, and uniformly mixing so as to obtain an M-doped zinc raw material; further performing chemcial vapor deposition, after deposition is completed, performing constant-temperature constant-pressure thermal treatment, thereby improving the mechanical and mechanical properties of the CVD ZnS crystal material. By adopting the method, on premise that the infrared permeation property of the CVD ZnS crystal material is not remarkably affected, the effect of improving the mechanical property of the CVD ZnS is achieved, the mechanical properties of the CVD ZnS crystal material are improved, the mechanical strength of the CVD ZnS crystal material is improved, the corrosion resistance and the thermal impact resistance is improved, and the method is applicable to on-scale production and commercial application.

Description

technical field [0001] The invention belongs to the field of doping modification and manufacturing of optoelectronic materials, and in particular relates to a method for doping modification of CVD ZnS crystal materials. Background technique [0002] CVD ZnS optical crystal is an important II-VI semiconductor material. It has good infrared transmittance in the 8-12 μm long-wave infrared band. It has excellent optical transmittance, so it can be widely used in the preparation of high-power infrared laser windows and infrared pods, high-speed aircraft infrared windows and fairings, and multi-spectral optical lenses in vision enhancement systems for other batch applications such as automobiles. At present, the preparation process of ZnS optical materials commercially applied in the world mainly includes ZnS powder hot pressing process and chemical vapor deposition (CVD) process. CVD ZnS grown by CVD process has excellent optical properties, high purity and good uniformity. adva...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B28/14C30B31/06
CPCC30B28/14C30B29/48C30B31/06
Inventor 姜杰李茂忠吴绍华王侃子光平应飞飞夏青松张明郭晨宇朱凯缪彦美
Owner YUNNAN KIRO CH PHOTONICS
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