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Quantum dot light-emitting diode and its preparation method

A quantum dot light-emitting and diode technology, which is applied in the fields of nano-optics, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of low light-emitting efficiency of QLED devices, and achieve the effect of improving light-emitting efficiency and high repeatability

Active Publication Date: 2021-06-22
TCL CORPORATION
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  • Description
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Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a quantum dot light-emitting diode and its preparation method, aiming at solving the technical problem of low light extraction efficiency of existing QLED devices

Method used

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  • Quantum dot light-emitting diode and its preparation method

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preparation example Construction

[0033] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, such as figure 2 shown, including the following steps:

[0034] S01: Provide the bottom electrode;

[0035] S02: preparing a nanopillar array on the surface of the bottom electrode;

[0036] In the nanocolumn array, the diameter of the nanocolumn is λ / (4×n 1 ), and the distance between any two adjacent nanopillars is λ / (4×n 2 ); Wherein, λ is the output light central wavelength of the quantum dot light-emitting diode, n 1 is the refractive index of the nanopillar material, n 2 is the refractive index of the filling material between the nanopillars, and n 1 ≠n 2 .

[0037] The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention is a device preparation method with high repeatability, low cost and high light extraction efficiency. In this preparation method, nano Column array,...

Embodiment 1

[0052] A QLED device with high light extraction efficiency, its structure is as follows figure 1 As shown, it includes anode, hole injection layer, hole transport layer, quantum dot light emitting layer, electron transport layer and cathode from bottom to top. A nanocolumn array composed of several nanocolumns is arranged on the surface of the anode close to the hole injection layer, and the material of the hole injection layer is filled in the gap between the nanocolumns; in the nanocolumn array, the diameter of the nanocolumn is λ / (4×n 1 ), and the distance between any two adjacent nanopillars is λ / (4×n 2 ); Wherein, λ is the output light central wavelength of the quantum dot light-emitting diode, n 1 is the refractive index of the nanocolumn, n 2 is the refractive index of the hole injection layer material, and n 1 ≠n 2 .

[0053] The preparation method of the device comprises the following steps:

[0054] S11: Prepare an ITO electrode (ie, an anode) on a transparen...

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Abstract

The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light emitting diode comprises a bottom electrode, a top electrode and a quantum dot light emitting layer arranged between the bottom electrode and the top electrode, the quantum dot light emitting diode is a bottom emission type quantum dot light emitting diode, and the bottom electrode A nanocolumn array composed of several nanocolumns is arranged near the surface of the quantum dot luminescent layer; in the nanocolumn array, in the nanocolumn array, the diameter of the nanocolumn is λ / (4×n 1 ), and the distance between any two adjacent nanopillars is λ / (4×n 2 ); Wherein, λ is the output light central wavelength of the quantum dot light-emitting diode, n 1 is the refractive index of the nanopillar material, n 2 is the refractive index of the material between the nanopillars, and n 1 ≠n 2 .

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] In recent years, QLED (Quantum Dot Light Emitting Diode, quantum dot light-emitting diode) and OLED (Organic Light Emitting Diode, organic light-emitting diode) have gained more and more attention due to their advantages such as high brightness, low power consumption, and wide color gamut. , Gradually become the two mainstream technologies in the display field, and form a trend of rivalry. QLED has shown great application potential due to its advantages such as low turn-on voltage, narrow luminous peak, and adjustable luminous wavelength. [0003] In terms of the performance of QLED devices, the low light extraction efficiency of the device has always been one of the focuses of researchers. At present, the commonly used methods to improve the light extraction efficien...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/56B82Y20/00
CPCB82Y20/00H10K50/852H10K71/00
Inventor 雷卉曹蔚然
Owner TCL CORPORATION
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