Bromine inorganic salt perovskite thin film and preparation method and application thereof

A perovskite and inorganic salt technology, applied in the fields of organic semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low external quantum efficiency of light-emitting devices, and achieve high luminous efficiency, high element abundance, and high luminous efficiency. The effect of facilitating the transportation process

Active Publication Date: 2020-07-10
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, due to the initial stage of the physical vapor deposition method, the external quantum efficiency of the light-emitting device prepared by this method is much lower than that of the chemical spin coating method.

Method used

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  • Bromine inorganic salt perovskite thin film and preparation method and application thereof
  • Bromine inorganic salt perovskite thin film and preparation method and application thereof
  • Bromine inorganic salt perovskite thin film and preparation method and application thereof

Examples

Experimental program
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Embodiment 1

[0032] (1) Using the spin-coating process, the PEDOT solution was spin-coated on the glass substrate sputtered with an ITO transparent electrode layer, and after annealing at 130° C. for 15 min, the PEDOT hole injection layer was obtained.

[0033] (2) By vacuum evaporation, CsBr powder, PbBr 2 powder and NaBr powder were vapor-deposited on the PEDOT hole-injection layer in sequence to prepare the perovskite light-emitting layer, and a total of 3 cycles were cycled; among them, CsBr powder, PbBr 2The molar ratio of powder and NaBr powder is 7:2:3, and the evaporation rates are 0.6°A / s, 0.3°A / s, and 0.1°A / s respectively, and they are put into the crucible respectively, and then the crucible is loaded into the evaporation source, and passed Adjust the power to control the evaporation rate. By controlling the indoor temperature, the substrate stage temperature is 25°C. After evaporation and coating, anneal at 100°C for 30 minutes to obtain a bromine inorganic salt perovskite film...

Embodiment 2

[0036] (1) The PEDOT hole injection layer was prepared according to the process conditions of Example 1.

[0037] (2) By vacuum evaporation, CsBr powder, PbBr 2 powder and KBr powder were vapor-deposited on the PEDOT hole injection layer in sequence to prepare the perovskite light-emitting layer, and there were 6 cycles in total; among them, CsBr powder, PbBr powder and PbBr 2 The molar ratio of powder and KBr powder is 11:3:2, and the evaporation rates are 1.0°A / s, 0.5°A / s, and 0.2°A / s, respectively, and put into crucibles respectively, and then put the crucible into the evaporation source, and pass Adjust the power to control the evaporation rate. By controlling the indoor temperature, the substrate stage temperature is 20°C. After evaporation and coating, anneal at 90°C for 30 minutes to obtain bromine inorganic salt perovskite film.

[0038] The structure of the bromine inorganic salt perovskite film prepared in this example is [PbBr 2 -KBr-CsBr-KBr] 6 -PbBr 2 , after ...

Embodiment 3

[0040] (1) The PEDOT hole injection layer was prepared according to the process conditions of Example 1.

[0041] (2) By vacuum evaporation, CsBr powder, PbBr 2 powder and LiBr powder were vapor-deposited on the PEDOT hole injection layer in sequence to prepare the perovskite light-emitting layer, and there were 2 cycles in total; among them, CsBr powder, PbBr powder and PbBr powder 2 The molar ratio of powder and LiBr powder is 14:3:1, and the evaporation rates are 0.4°A / s, 0.6°A / s, and 0.05°A / s respectively, put them into crucibles respectively, then put the crucibles into the evaporation source, and pass Adjust the power to control the evaporation rate. By controlling the indoor temperature, the substrate stage temperature is 28°C. After evaporation and coating, anneal at 120°C for 20 minutes to obtain a bromine inorganic salt perovskite film.

[0042] The structure of the bromine inorganic salt perovskite film prepared in this example is [PbBr 2 -LiBr-CsBr-LiBr] 2 -PbBr...

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Abstract

The invention discloses a bromine inorganic salt perovskite thin film and a preparation method thereof. The molecular formula of the bromine inorganic salt perovskite thin film is [PbBr2-MBr-CsBr-MBr]n-PbBr2, wherein the MBr is NaBr, LiBr or KBr, and the LiBr is NaBr, LiBr or KBr; n is 1 to 10; the preparation method comprises the following steps: putting a base material to be deposited into a vacuum sealed chamber; evaporating sources of PbBr2, CsBr and MBr are started in sequence and deposited on the base material in a layered mode to form a [PbBr2-MBr-CsBr-MBr] perovskite layer, cyclic deposition is conducted for a plurality of periods, a single layer of PbBr2 is deposited on the uppermost layer, annealing treatment is conducted, and the bromine inorganic salt perovskite thin film is formed. The bromine inorganic salt perovskite thin film provided by the invention has good conductivity; the perovskite light-emitting diode with the bromine inorganic salt perovskite thin film as thelight-emitting layer has the characteristics of high carrier mobility, high exciton binding energy, high light-emitting efficiency, high element abundance, low cost and the like.

Description

technical field [0001] The invention relates to the technical field of light-emitting diode preparation, in particular to a bromine inorganic salt perovskite thin film and its preparation method and application. Background technique [0002] Since the first report in 2014 that perovskite light-emitting diodes can emit light at room temperature, it has attracted the interest of a large number of scholars at home and abroad. After several years of development, perovskite (ABX) in perovskite light-emitting diodes 3 , A represents an organic ammonium cation or an inorganic metal cation, such as CH 3 NH 3 , HC (NH 2 ) 2 And Cs, etc.; B represents divalent metal ions, such as Pb 2+ , Sn 2+ etc., X represents halide ions, such as I, Cl, Br, etc.) has gradually become a new generation of star semiconductor materials due to its excellent optoelectronic properties. Perovskite materials have a high light absorption coefficient (~10 5 ), wide optical absorption spectrum (200-100...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K2102/00H10K50/11H10K71/00
Inventor方彦俊秦丰尤田鸿君闫敏行杨德仁
OwnerZHEJIANG UNIV