Wafer heating device

A technology for heating devices and wafers, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc. It can solve the problems of poor uniformity of wafer heating methods, and achieve the effect of meeting processing requirements and uniform temperature

Pending Publication Date: 2020-07-14
宁波润华全芯微电子设备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned defects existing in the prior ar

Method used

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  • Wafer heating device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Such as figure 1 As shown, the wafer heating device includes a control module and a multi-zone hot plate. Those skilled in the art can divide the hot plate into several zones according to actual needs. For the convenience of illustration, this embodiment divides the multi-zone hot plate into the first Partition and Second Partition.

[0028] The first partition includes a first heating module and a first temperature detection module, the first temperature detection module is used to detect the temperature value of the first partition, and sends the detected temperature value of the first partition to the control module, and the first heating module uses for heating the first zone;

[0029] The second partition includes a second heating module and a second temperature detection module, the second temperature detection module is used to detect the temperature value of the second partition, and sends the detected temperature value of the second partition to the control mo...

Embodiment 2

[0041] The difference between this implementation and Example 1 is that the wafer heating is in the heating and heating stage. In this stage, the precision value of the control module is set to 0.5°C. When the temperature value difference between the first partition and the second partition exceeds 0.5°C , the control module reduces the output power of the power relay of the zone with higher temperature, or the control module increases the output power of the power relay of the zone with lower temperature.

[0042] A person skilled in the art can set the precision value of this stage according to actual needs.

[0043] Through the partitioned temperature management of the hot plate, the temperature difference between the various partitions is always within a reasonable range, and the heating rate can be increased, without worrying about the uneven temperature of the hot plate and damaging the wafer, and finally achieved the shortening of the wafer. Processing time, the purpose...

Embodiment 3

[0045] The difference between this implementation and Example 1 is that the wafer heating is in the cooling and cooling stage. In this stage, the precision value of the control module is set to 0.4°C. When the temperature value difference between the first partition and the second partition exceeds 0.4°C , the control module reduces the output power of the power relay of the zone with higher temperature, or the control module increases the output power of the power relay of the zone with lower temperature.

[0046] A person skilled in the art can set the precision value of this stage according to actual needs.

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Abstract

The invention discloses a wafer heating device, and relates to the technical field of semiconductors. The device comprises a control module and a multi-partition hot plate; the multi-partition hot plate comprises a first partition and a second partition; the first subarea comprises a first heating module and a first temperature detection module, the first temperature detection module is used for detecting the temperature value of the first subarea and sending the detected temperature value of the first subarea to the control module, and the first heating module is used for heating the first subarea; the second subarea comprises a second heating module and a second temperature detection module; the second temperature detection module is used for detecting the temperature value of the secondsubarea and sending the detected temperature value of the second subarea to the control module, and the second heating module is used for heating the second subarea; compared with the prior art, thetemperature difference between the partitions is always within a reasonable range, so the temperature of the hot plate is uniform, and the processing requirement of a high-precision wafer is met.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer heating device. Background technique [0002] With the advancement of science and technology, the processing technology of wafers has become more and more complex, requiring more devices to be fabricated in a unit wafer area, resulting in narrower widths of the lines in the wafer. When the wafer is heated on a hot plate, the thermal The uniformity of the plate temperature is more demanding. [0003] The hot plate used in wafer heating is composed of a heating plate sandwiched between the upper plate and the pressing plate, or several heating tubes are embedded in the upper plate, and the temperature of the hot plate is controlled by a temperature sensor and a controller. As a result, the surface temperature of the hot plate is not uniform, which cannot meet the processing requirements of high-precision wafers. [0004] Another example is an electronically control...

Claims

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Application Information

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IPC IPC(8): H01L21/67
CPCH01L21/67098H01L21/67103H01L21/67248
Inventor 王伟陈胜华
Owner 宁波润华全芯微电子设备有限公司
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