Preparation method of vertical carbon nanotube arrays for high absorption ratio materials
A technology of carbon nanotube array and buffer layer, which is applied in the direction of nanotechnology, carbon nanotubes, and nanocarbon for materials and surface science, and can solve the problem of small applicable temperature range, narrow applicable spectral range, and large-area ultra-black coating. The problem of high difficulty in layer processing, to achieve the effect of low implementation difficulty and easy acquisition
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[0021] Please refer to figure 1 as well as figure 2 , the preparation method of the vertical carbon nanotube array of the present invention comprises the following steps:
[0022] (1) plating a buffer layer and a catalyst layer on the surface of the substrate in turn;
[0023] (2) The substrate coated with the buffer layer and the catalyst layer is placed in a chemical vapor deposition reaction chamber, a carbon source is introduced, and the reaction is carried out at 650-900 ° C until the surface of the catalyst layer is precipitated and the vertical carbon is formed Nanotube arrays.
[0024] As can be seen from the above description, the beneficial effects of the present invention are:
[0025] According to the design of the above steps (1)-(2), the present invention firstly uses a plating process such as magnetron sputtering or atomic layer deposition to sequentially coat a buffer layer and a catalyst layer on the substrate, and then utilizes CVD reaction, carbon source...
Embodiment 1
[0035] The preparation method of the vertical carbon nanotube array of this embodiment is mainly carried out in the following two steps:
[0036] Step 1: A buffer layer and a catalyst layer are sequentially plated on the surface of the substrate by magnetron sputtering or atomic layer deposition;
[0037] Wherein, the specific preparation of buffer layer film and catalyst film is as follows:
[0038] The film deposited on the surface of the substrate consists of a buffer layer film and a catalyst film. The buffer layer used is Al 2 O 3 Thin film, the catalyst thin film used is iron thin film. The magnetron sputtering process can be performed using existing magnetron sputtering equipment.
[0039] The substrate used for the preparation of the buffer layer film was a P single-sided polished silicon wafer with a thickness of about 725 μm, which was ultrasonically cleaned with ethanol, acetone, and deionized water in sequence, and then dried for use. Then, an aluminum oxide f...
Embodiment 2
[0045] The preparation method of the vertical carbon nanotube array in this embodiment is different from the first embodiment except that “the temperature for CVD reaction to synthesize nanotubes is 650° C.”, and the others are the same as the first embodiment.
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Abstract
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