Reverse cutting process for diamond wire

Abstract

The invention belongs to the technical field of diamond wire cutting, and particularly relates to a reverse cutting process for a diamond wire. The reverse cutting process comprises the following steps: selecting and cleaning a qualified crystal bar, filling the crystal bar into a clamping guide rail of a cutter workbench, adopting the diamond wire with the diameter of 45 [mu]m-60[mu]m as a cutting wire, spreading a cutting wire net, adding cooling liquid, placing the diamond wire for cutting onto a take-up wheel from a pay-off wheel, setting diamond wire operation speed to be 600 m / min-2100m / min, and setting cutting workbench feeding speed to be 200-3500 [mu]m / min, changing a cutting direction to be reverse cutting from front cutting before cutting, starting a cutter to start cutting, andtaking down the crystal bar by an unloading vehicle after cutting is accomplished. The reverse cutting process adopted by the invention is consistent in cutting direction in the whole process, improves the problem that surface quality and chromatic aberration of a silicon slice is poor, improves silicon slice surface quality, and reduces production cost.

Description

Technical field [0001] The invention belongs to the technical field of diamond wire cutting, and specifically relates to a diamond wire reverse cutting process. Background technique [0002] At present, with the multi-wire cutting of photovoltaic silicon wafers, the gradual reduction of production costs is the lifeblood of a long-term survival of enterprises, and the reduction of production costs permeates every aspect of production. The process has a great influence on the surface quality of the silicon wafer, and the surface quality of the silicon wafer is an important indicator that affects the cutting yield. Poor setting of process parameters will lead to poor surface quality of the cut silicon wafer, resulting in a reduction in silicon wafer grade and production. The cost increases, and at the same time, the poor surface quality of the silicon wafer will also affect the texturing of the subsequent battery end process. [0003] Many companies currently use tangent and forward-...

AI Technical Summary

Problems solved by technology

The process has a great influence on the quality of the cut surface of the silicon wafer, and the surface quality of the silicon wafer is an important indicator that affects the cutting yield. If the process parameters are not set properly, the surface quality of the cut silicon wafer will be poor and abnormal, resulting in a decrease in the grade of the silicon wafer and production. The cost increases, and at the same time, the poor surface quality of the silicon wafer will also affect the texturing of the subsequent battery end process

[0003] At present, many enterprises adopt tangent and anti-tangential process methods for multi-wire cutting. Both tangent and anti-tangential are cut into the knife by the old wire mesh. It is easy to have a large wire bow at the position where the knife enters, resulting in abnormal color difference on the surface of the silicon wafer where the knife enters, and Forward and reverse cutting process, when the forward cutting reaches a certain position in the middle of the silicon wafer, the reverse cutting is switched. The cutting force of the steel wire at this position is inconsistent, which may easily lead to poor color difference and TTV at the reverse cutting position of the silicon wafer, which will affect the surface quality of the silicon wafer.

Images