Bifunctional detector based on charge narrowing collection effect and preparation method thereof

A dual-function, detector technology, applied in the field of photoelectric detection, can solve the problem of wide half-wave peak width of perovskite photodetector, and achieve the effect of good detection ability and unique structure

Pending Publication Date: 2020-08-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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Problems solved by technology

[0004] The object of the present invention is to provide a dual-function detector based on the charge narrowing collection effect and its preparation method in order to solve the problem of the wide half-wave peak of the perovskite photodetector

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  • Bifunctional detector based on charge narrowing collection effect and preparation method thereof

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Embodiment 1

[0034] A dual-function detector based on the charge narrowing collection effect, including a glass substrate 1 coated with a transparent conductive electrode layer 2, and the transparent conductive electrode layer 2 is sequentially spin-coated with hole transport from bottom to top layer 3, a perovskite active layer 4, and an electron transport layer 5, the electron transport layer 5 is plated with a hole blocking layer 6 and a metal electrode layer 7 sequentially from bottom to top.

[0035] Wherein, the transparent conductive electrode layer 2 adopts an ITO transparent conductive electrode with a thickness of 150 nm.

[0036] The hole transport layer 3 is a PEDOT:PSS thin film with a thickness of 90 nm.

[0037] The perovskite active layer 4 adopts CH with a thickness of 1000nm 3 NH 3 PbBr 1.5 I 1.5 .

[0038] Electron transport layer 5 adopts PC with a thickness of 100nm 61 BM.

[0039] Hole blocking layer 6 adopts the C that thickness is 60nm 60 film.

[0040] The...

Embodiment 2

[0053] On the basis of Example 1, the difference between this example and Example 1 is that the perovskite active layer 4 is replaced by CH 3 NH 3 PB 2 Br 1 .

[0054] Methylamine lead iodide and methylamine lead bromide were dissolved in DMF (N-N dimethylformamide) solution at a molar ratio of 2:1, and doped with 7% mass ratio of RhodamineB, stirred at 100°C for 6h, respectively Three different ratios of perovskite precursor solutions doped with RhodamineB were obtained: CH 3 NH 3 PB 2 Br 1 .

[0055] Under standard test conditions, the light beam is drawn from the light source, and the incident light is vertically incident on the perovskite photodetector. The test result shows that the perovskite photodetector has a narrow-band detection capability at 650nm, and the half-wave peak width is 35nm. 5.6-10 12 Jones; the light beam is drawn from the light source, and the incident light 8 is vertically incident on the perovskite photodetector. The test result shows that t...

Embodiment 3

[0057] On the basis of Example 1, the difference between this example and Example 1 is that the perovskite active layer 4 is replaced by CH 3 NH 3 PB 1.5 Br 1.5 .

[0058] Methylamine lead iodide and methylamine lead bromide were dissolved in DMF (N-N dimethylformamide) solution at a molar ratio of 1:1, and mixed with 7% mass ratio of RhodamineB, stirred at 100°C for 6h, respectively Three different ratios of perovskite precursor solutions doped with RhodamineB were obtained: CH 3 NH 3 PB 2 Br 1 .

[0059] Under standard test conditions, the light beam is extracted from the light source, and the incident light 8 is vertically incident on the perovskite photodetector. The test result shows that the perovskite photodetector has a narrow-band detection capability at 620nm, and the half-wave peak width is 30nm. The rate is 5.6-10 12 Jones; the light beam is drawn from the light source, and the incident light 8 is vertically incident on the perovskite photodetector. The te...

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Abstract

The invention relates to the technical field of photoelectric detection, in particular to a bifunctional detector based on a charge narrowing collection effect and a preparation method of the bifunctional detector. The bifunctional detector based on a charge narrowing collection effect sequentially comprises a glass substrate, a transparent conductive electrode layer, a hole transport layer, a perovskite active layer, an electron transport layer, a hole barrier layer and a metal electrode layer from bottom to top, the perovskite active layer is prepared from one or more of the following five materials: a typical halogen perovskite material, a halogen-substituted solid solution perovskite material, a monovalent cation-substituted perovskite material, a metal-substituted solid solution perovskite material and a two-dimensional perovskite material. The invention provides a bifunctional detector based on a charge narrowing collection effect and the preparation method of the bifunctional detector, and successfully solves the problem of large half-wave peak width of a perovskite photoelectric detector.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a dual-function detector based on charge narrowing collection effect and a preparation method thereof. Background technique [0002] A photodetector is a device that detects and measures the properties of light through the photoelectric effect, usually in the form of a photocurrent, through which the corresponding information of the detected light wave can be deduced. Photodetectors are widely used in various aspects, including surveillance imaging, surveying and mapping detection, environmental monitoring and biochemical medicine, etc. At present, optical detectors are mainly divided into four categories, namely, organic material detectors, inorganic material detectors, quantum dot material detectors, and perovskite material detectors. Although the technology of the first three types of detectors is relatively mature, they have problems such as complicated manuf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/00H01L51/48
CPCH10K85/30H10K77/111H10K30/15H10K30/87Y02E10/549Y02P70/50
Inventor 张磊宛晨黄江李娜
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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