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Method for simulating linear and nonlinear electrical properties of random silver nanowire network

A technology of silver nanowires and electrical properties, applied in the field of simulation of linear and nonlinear electrical properties of random silver nanowire networks, can solve the problem that the voltage-current correspondence of random silver nanowire networks cannot be accurately simulated, and random silver nanowire networks Insufficient simulation accuracy and other problems to achieve the effect of accurate simulation analysis

Pending Publication Date: 2020-08-21
SOUTHEAST UNIV
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Problems solved by technology

[0006] For example, the complex nonlinear devices and circuits in the random silver nanowire network cannot be well handled; the corresponding relationship between the voltage and current of the random silver nanowire network cannot be accurately simulated; it is difficult to perform various circuits on the same random silver nanowire network. Analysis mode; insufficient precision for random silver nanowire network simulations

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  • Method for simulating linear and nonlinear electrical properties of random silver nanowire network
  • Method for simulating linear and nonlinear electrical properties of random silver nanowire network
  • Method for simulating linear and nonlinear electrical properties of random silver nanowire network

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Embodiment Construction

[0024] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below.

[0025] The present invention provides a method for simulating the linear and nonlinear electrical properties of a random silver nanowire network, such as figure 1 shown, including steps:

[0026] Step 1, the establishment of the nanowire network model, such as figure 2 shown, including:

[0027] Determination of the size of RVE (Represent Volume Element): RVE is also the generated domain (L x × L y ), whose size is determined according to the stability of the nanowire network percolation threshold and equivalent resistivity obtained in steps 3 and 5.

[0028] Determination and generation of nanowire geometric parameters: according to the center point coordinates (x i,0 ,y i,0 ), direction angle θ i , the probability density function of the nanowire length L and diameter D, use MATLAB to generate the ...

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Abstract

The invention discloses a method for simulating linear and nonlinear electrical properties of a random silver nanowire network. The method comprises the following steps: step 1, constructing a randomsilver nanowire network microcosmic model; 2, describing the microcosmic model by utilizing a graph theory idea and a double-node model to obtain directed graph matrix representation of the microcosmic model; 3, judging the connectivity of the nanowire network according to a connectivity algorithm of the graph; 4, abstracting the nanowire network directed graph into an electric network model by adopting an equivalent circuit method / electric network theory; and step 5, performing electrical simulation and analysis on the nanowire network circuit model by means of an HSPICE circuit simulation tool. According to the method, under the condition that the topological structure of the random silver nanowire network is kept unchanged, the resistance circuit model and the resistance-memristor hybrid circuit model are freely converted, accurate simulation of linear and nonlinear electrical behaviors of the same random silver nanowire network is achieved, and design and optimization of the randomsilver nanowire network in practical application can be guided.

Description

technical field [0001] The invention relates to the fields of transparent conductive films, conductive composite materials, flexible sensing, non-volatile storage, neuromorphic systems and other fields based on the application of random silver nanowire networks, and specifically relates to a linear and nonlinear electrical system of random silver nanowire networks property simulation method. Background technique [0002] Random silver nanowire networks with good mechanical bending, tensile stability, low cost, and adaptable to mass production have attracted widespread attention in conductive composites, transparent conductive films, flexible sensing, non-volatile Storage, neuromorphic systems and other fields have very broad application prospects. [0003] The method for synthesizing silver nanowires in large quantities is generally the polyol method. However, the silver nanowires prepared by the polyol method have a polymer (polyvinylpyrrolidone, PVP) insulating layer abo...

Claims

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Application Information

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IPC IPC(8): G06F30/20
CPCG06F30/20
Inventor 赵志伟翁正进方勇吴锦东江和龙
Owner SOUTHEAST UNIV
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