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A kind of LED lamp board and preparation method thereof

A technology of LED light board and metal layer, applied in the direction of identification devices, instruments, etc., can solve the problems of ITO fracture, conduction, and the sidewall of the opening is not smooth, so as to improve the response speed and improve the conductivity.

Active Publication Date: 2022-04-08
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above-mentioned technical problems, the present invention provides an LED light board and its preparation method, which is used to solve the problem that the side walls of the openings are not smooth due to the different etching rates of different reflective layers in the prior art, and the ITO is easy to be on the side of the openings. The technical problem that the wall is broken so that the signal conduction in the bonding area cannot be performed

Method used

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  • A kind of LED lamp board and preparation method thereof
  • A kind of LED lamp board and preparation method thereof
  • A kind of LED lamp board and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Such as figure 1 with figure 2 As shown, in this embodiment, the LED light board of the present invention includes a first metal layer 10 , a first insulating layer 20 , a second metal layer 30 , a second insulating layer 40 and a conductive layer 50 .

[0034] The first metal layer 10 is disposed on a substrate, and its material includes molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., or an alloy, which has good electrical conductivity.

[0035] The first insulating layer 20 is disposed on the substrate and covers the upper surface of the first metal layer 10. The first insulating layer 20 is provided with a first opening 21 corresponding to the first metal layer 10. The first opening 21 The lower surface is disposed on the first metal layer 10 , that is, the first metal layer 10 is partially exposed in the first opening 21 for subsequent connection with the second metal layer 30 .

[0036] The second metal layer 30 is disposed in the first openin...

Embodiment 2

[0050] Such as Figure 4 As shown, in this embodiment, the LED light board of the present invention includes a first metal layer 10 , a first insulating layer 20 , a second metal layer 30 , a second insulating layer 401 and a conductive layer 50 .

[0051] The first metal layer 10 is disposed on a substrate, and its material includes molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., or an alloy, which has good electrical conductivity.

[0052] The first insulating layer 20 is disposed on the substrate and covers the upper surface of the first metal layer 10. The first insulating layer 20 is provided with a first opening 21 corresponding to the first metal layer 10. The first opening 21 The lower surface is disposed on the first metal layer 10 , that is, the first metal layer 10 is partially exposed in the first opening 21 for subsequent connection with the second metal layer 30 .

[0053] The second metal layer 30 is disposed in the first opening 21, and its t...

Embodiment 3

[0067] Such as Image 6 with Figure 7 As shown, in this embodiment, the LED light board of the present invention includes a first metal layer 10 , a first insulating layer 20 , a second metal layer 30 , a second insulating layer 402 and a conductive layer 50 .

[0068] The first metal layer 10 is disposed on a substrate, and its material includes molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., or an alloy, which has good electrical conductivity.

[0069] The first insulating layer 20 is disposed on the substrate and covers the upper surface of the first metal layer 10. The first insulating layer 20 is provided with a first opening 21 corresponding to the first metal layer 10. The first opening 21 The lower surface is disposed on the first metal layer 10 , that is, the first metal layer 10 is partially exposed in the first opening 21 for subsequent connection with the second metal layer 30 .

[0070] The second metal layer 30 is disposed in the first openin...

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Abstract

The invention provides an LED lamp board and a preparation method thereof. The LED lamp board includes a first metal layer; a first insulating layer covering the first metal layer, wherein the first insulating layer corresponds to the first metal layer A first opening is provided at the layer; a second metal layer is correspondingly provided above the first metal layer; and a conductive layer is provided on the first metal layer, the first insulating layer and the second metal layer. layer above. The beneficial effect of the present invention lies in that the LED light board and its preparation method of the present invention avoid the conductive layer being inside the opening by changing the material of the second insulating layer or increasing the size of the opening or reducing the size of the second metal layer. Cracks appear on the wall, thereby increasing the conductivity between the conductive layer and each conductive film layer, and improving the response speed of the LED light board.

Description

technical field [0001] The present application relates to the field, in particular to an LED lamp panel and a preparation method thereof. Background technique [0002] Mini LED is a new type of LED display technology derived from small-pitch LEDs in recent years, mainly including mini LED backlight and mini LED direct display. AM mini LED technology uses TFT as the driving circuit to realize active matrix (AM mini LED) driving. Compared with PM mini LED, it has the advantages of reducing the spacing between LEDs and reducing the overall design cost. Make the mini LED backlight have a higher partition possibility, and make the mini LED direct display have a higher resolution possibility. [0003] One of the solutions that can reduce the cost of AM mini LED is: by adjusting the inorganic film refractive index n, light absorption coefficient k and film thickness t to combine multi-layer thin films to meet the needs of high reflectivity and anti-reflectivity, it can replace the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09F9/33
CPCG09F9/33
Inventor 孙正娟孙世英
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD