Contact resistance monitoring device and manufacturing method thereof, and display panel
A contact resistance, display panel technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problem of affecting the conductivity of the pixel electrode layer 5, and the resistance monitoring device cannot correctly reflect the pixel electrode and thin film transistor drain. Contact resistance and other issues to avoid breakage and ensure accuracy and stability
Active Publication Date: 2021-12-28
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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like figure 1 As shown, the resistance monitoring device in the prior art includes a substrate 1, a gate metal layer 2, an interlayer dielectric layer 3, a source-drain metal layer 4, and a pixel electrode layer 5, wherein the source-drain metal layer 4 is made of titanium - It is made of aluminum-titanium three-layer metal stack. In the process of making the source and drain metal layer 4, etching technology needs to be used, but the etching rate of metal aluminum is much higher than that of metal titanium, resulting in the final source and drain metal layer A recessed area K is formed on the surface; when the pixel electrode layer 5 is continued to be fabricated on the source-drain metal layer 4, fractures of the pixel electrode layer 5 are likely to appear at the recessed area K, which affects the conductivity of the pixel electrode layer 5, thereby causing the resistance The monitoring device does not correctly reflect the contact resistance between the pixel electrode and the drain of the thin film transistor
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[0054] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments that the present application can be used to implement. The directional terms mentioned in this application, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the application, but not to limit the application. In the figures, structurally similar elements are denoted by the same reference numerals.
[0055] The embodiment of the present application provides a contact resistance monitoring device and its manufacturing method, and a display panel. The source and drain metal layers of the contact resistance monitoring device are sunkenly arranged in the concave hole of the interlayer dielectric layer, so that the The interlayer dielectric layer and the source-drain metal...
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The present application provides a contact resistance monitoring device, a manufacturing method thereof, and a display panel. The contact resistance monitoring device includes a substrate, a gate metal layer disposed on the substrate, and an interlayer dielectric layer disposed on the substrate. , a source-drain metal layer disposed in the concave hole of the interlayer dielectric layer, and a pixel electrode layer disposed on the interlayer dielectric layer and the source-drain metal layer. In the present application, by disposing the source-drain metal layer in the concave hole of the interlayer dielectric layer, the breakage of the pixel electrode layer caused by the concave surface of the source-drain metal layer is avoided, which is beneficial to ensure that the contact resistance monitoring device The measured contact resistance accuracy and stability between the pixel electrode layer and the source-drain metal layer.
Description
technical field [0001] The present application relates to the field of display technology, in particular to a contact resistance monitoring device, a manufacturing method thereof, and a display panel. Background technique [0002] The thin film transistor technology is widely used in the driving circuit of the display panel. The thin film transistor includes a gate, a source and a drain, and the drain is electrically connected to the pixel electrode; the voltage between the source and the drain is controlled by the voltage applied to the gate. Conduction status, and then control the working state of the pixel electrode. Therefore, the size of the contact resistance between the drain electrode and the pixel electrode determines the power consumption of the driving circuit and the corresponding speed of the pixel electrode. [0003] In the prior art, the method for testing the contact resistance between the drain electrode of the thin film transistor and the pixel electrode i...
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IPC IPC(8): H01L27/12H01L21/66H01L21/77G01R27/02
CPCH01L22/34H01L27/1214H01L27/1244H01L27/1259G01R27/02H01L27/124
Inventor 聂晓辉
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD