Unlock instant, AI-driven research and patent intelligence for your innovation.

Mask boundary detection method, computer readable storage medium and system

A boundary detection and mask technology, applied in the field of lithography, can solve the problems of large amount of computation and inability to process the mask layout at one time, and achieve the effect of avoiding misjudgment

Pending Publication Date: 2020-09-01
SHENZHEN JINGYUAN INFORMATION TECH CO LTD
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the huge amount of computational lithography, the current computer system cannot process the entire mask layout at one time, so it is necessary to divide the mask layout into micron-scale small layouts and then perform distributed parallel computing on them, and finally optimize each The small pieces of the layout are integrated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mask boundary detection method, computer readable storage medium and system
  • Mask boundary detection method, computer readable storage medium and system
  • Mask boundary detection method, computer readable storage medium and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and implementation examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0034] see figure 1 , the present invention provides a mask boundary detection method, which includes the following steps:

[0035] Step S1: Obtain the target graphic layer, the main graphic layer and the auxiliary graphic layer in the mask layout, and divide the mask layout;

[0036] Step S2: Detect the consistency of the auxiliary graphics in the auxiliary graphics layer at the division;

[0037] Step S3: Check the consistency of the main graphics in the main graphics layer at the division.

[0038] Specifically, the mask pattern is a variety of functional patterns made on fil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a mask boundary detection method, which is used for detecting mask boundary consistency after splicing, and is characterized by comprising the following steps of: S1, acquiringa target graph layer, a main graph layer and an auxiliary graph layer in a mask graph, and dividing the mask graph; S2, detecting the consistency of the auxiliary graphs in the auxiliary graph layer at the division positions; and S3, detecting the consistency of the main graph in the main graph layer at the division position. The invention further provides a computer readable storage medium. The invention also provides a mask boundary detection system.

Description

【Technical field】 [0001] The invention relates to the field of photolithography, in particular to a mask boundary detection method, a computer-readable storage medium and a system. 【Background technique】 [0002] Photolithography technology is one of the core technologies used to manufacture VLSI. The photolithography system uses a light source to illuminate the reticle, and the integrated circuit layout on the mask is imaged onto the photoresist through the projection objective lens. Computational lithography uses computers to simulate and simulate the optical and chemical processes of lithography, theoretically explore ways to increase lithography resolution and process window, and guide the optimization of process parameters. [0003] As the technology node continues to shrink, the improvement of the resolution of the lithography process relies on resolution enhancement technologies, including optimization of lighting conditions, correction of optical proximity effects, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06T7/13G06T7/70G06T7/00
CPCG06T7/13G06T7/70G06T7/0004G06T2207/10004G06T2207/30141
Inventor 陈运廖丹丹张生睿方伟
Owner SHENZHEN JINGYUAN INFORMATION TECH CO LTD