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Storage unit of magnetic random access memory and magnetic random access memory

A technology of random access memory and storage unit, applied in the field of magnetic random access memory storage unit and magnetic random access memory, can solve the problems of reducing TMR, increasing read operation error rate, unfavorable device read operation, etc., and achieves reducing damping coefficient, increasing thickness, increasing Effect of Thermal Stability Factor

Active Publication Date: 2020-09-01
SHANGHAI CIYU INFORMATION TECH CO LTD
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Problems solved by technology

If the thickness of the free layer is reduced, the tunneling magnetoresistance rate (Tunnel Magnetoresistance Ration, TMR) will decrease, which will increase the error rate during the read operation; Changing the layer to a material with a low saturation magnetic susceptibility will also reduce the TMR, which is not conducive to the read operation of the device

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  • Storage unit of magnetic random access memory and magnetic random access memory
  • Storage unit of magnetic random access memory and magnetic random access memory
  • Storage unit of magnetic random access memory and magnetic random access memory

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Embodiment Construction

[0035] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0036] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate ...

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Abstract

The invention discloses a storage unit of a magnetic random access memory and the magnetic random access memory. The storage unit comprises a reference layer, a barrier layer, a first free layer whichare laminated, and also comprises a second free layer, a vertical magnetic coupling layer below the second free layer and a magnetic damping barrier layer above the second free layer. A magnetizationvector in the second free layer is always perpendicular to the first free layer and is parallel to a magnetization vector in the first free layer, the vertical magnetic coupling layer is used for realizing the strong magnetic coupling of the first free layer and the second free layer and providing an additional vertical interface anisotropic source, and the magnetic damping barrier layer providesan additional source of anisotropy while reducing the magnetic damping coefficient of a film layer. According to the invention, by adding the additional second free layer, the TMR is not influenced,the thickness of the free layer is increased, the magnetic damping coefficient is reduced, a thermal stability factor is increased, and the critical write current is not increased.

Description

technical field [0001] The invention relates to the field of magnetic random access memory, in particular to a magnetic random access memory storage unit with double free layers and the magnetic random access memory. Background technique [0002] In recent years, MRAM using Magnetic Tunnel Junction (MTJ) is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer (free layer), which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer side, its magnetization direction does not change. [0003] In order to record information in this magnetoresistive element, it is suggested to use a writing method based on spin-momentum transfer or spin tra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/02H01L43/10G11C11/16
CPCG11C11/161H10N50/80H10N50/10H10N50/85G11C11/15H10B61/00
Inventor 张云森陈峻郭一民肖荣福
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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