AlGaN-based ultraviolet LED epitaxial structure
An epitaxial structure and heterostructure technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor light output efficiency, no technical solutions, low refractive index, etc., to improve the light output power and reliability. Effect
Active Publication Date: 2020-09-08
佛山紫熙慧众科技有限公司
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Problems solved by technology
At present, the GaN-based blue LED epitaxial structure generally includes a substrate, a buffer layer, a first semiconductor layer, a multi-quantum well light-emitting layer, a final barrier layer, an electron blocking layer, and a second semiconductor layer. The multi-quantum well light-emitting layer is generally InGaN / GaN Superlattice structure, the electron blocking layer is a P-type AlGaN structure, but because the refractive index of AlGaN material is lower than that of GaN and InGaN, the light emitted in the multi-quantum well light-emitting layer is easy to be at the interface between the final barrier layer and the electron blocking layer Total reflection occurs, resulting in poor light output efficiency
[0003]
For the above problems, there is no effective technical solution
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[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.
[0026] It should ...
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Abstract
The embodiment of the invention provides an AlGaN-based ultraviolet LED epitaxial structure. The AlGaN-based ultraviolet LED epitaxial structure comprises a substrate, a nitride heterostructure layer,a diamond / nitride heterostructure layer, a nitride heterogeneous active region light-emitting structure layer and a p-type nitride heterostructure layer, wherein the nitride heterostructure layer isarranged on the substrate; the diamond / nitride heterostructure layer is arranged on the nitride heterostructure layer, and the diamond / nitride heterostructure layer is a diamond / nitride superlattice structure layer; the nitride heterogeneous active region light-emitting structure layer is arranged on the diamond / nitride heterogeneous structure layer; and the p-type nitride heterostructure layer isarranged on the nitride heterostructure active region light-emitting structure layer. According to the AlGaN-based ultraviolet LED epitaxial structure provided by the embodiment of the invention, thediamond / nitride heterostructure layer is arranged, and the diamond / nitride heterostructure layer is a diamond / nitride superlattice structure layer, so that the reflection of photons in an ultravioletband can be improved by utilizing the refractive index difference of superlattices, and the light output power and the reliability of the LED device are improved.
Description
technical field [0001] The present application relates to the technical field of LED lighting, and in particular, relates to an AlGaN-based ultraviolet LED epitaxial structure. Background technique [0002] LED is a semiconductor solid-state light-emitting device, which uses a semiconductor P-N junction as a light-emitting structure. Gallium nitride is currently regarded as the third-generation semiconductor material, and gallium nitride-based light-emitting diodes with InGaN / GaN active regions are regarded as the most advanced Potential light source. At present, the GaN-based blue LED epitaxial structure generally includes a substrate, a buffer layer, a first semiconductor layer, a multi-quantum well light-emitting layer, a final barrier layer, an electron blocking layer, and a second semiconductor layer. The multi-quantum well light-emitting layer is generally InGaN / GaN Superlattice structure, the electron blocking layer is a P-type AlGaN structure, but because the refrac...
Claims
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IPC IPC(8): H01L33/10H01L33/26H01L33/32
CPCH01L33/10H01L33/26H01L33/32
Inventor 周启航
Owner 佛山紫熙慧众科技有限公司