Total dose radiation test method and device for nano field effect transistor

Abstract

The invention relates to a total dose radiation test method and device for a nano field effect transistor, and the test method comprises the following steps: providing a field effect transistor devicewith statistical significance, carrying out the first electrical parameter test, and obtaining a first threshold voltage; performing radiation processing on the field effect transistor for a plurality of times until a preset total radiation dose is reached, and performing a second electrical parameter test after each radiation processing; performing bias processing on the field effect transistorafter radiation processing to the total radiation dose, and then performing a third electrical parameter test to acquire a third threshold voltage; and judging whether the field effect transistor device meets the product requirement or not according to the defect distribution value obtained by data processing. The test method provides an analysis method for the nano field effect transistor, and effectively solves the problems that the fluctuation amplitude is large due to the quantum effect and the fluctuation effect of the nano field effect transistor, and the traditional technology cannot accurately analyze.

Description

technical field [0001] The invention relates to the technical field of microelectronic devices, in particular to a method and device for a total dose radiation test of a nanometer field effect transistor. Background technique [0002] Space vehicles operate in a harsh environment of strong radiation. Radiation in space, including galactic cosmic rays, solar cosmic rays, and high-energy protons, alpha particles, heavy ions, electrons and other particles in the geomagnetic field capture belt will cause Integrated circuits have radiation effects, including cumulative radiation effects and transient radiation effects, etc. These radiation effects can lead to performance degradation or even functional failure of electronic components and integrated circuits, resulting in operational failures of space vehicles. [0003] In the traditional technology, the total dose radiation test of field effect transistor devices is mainly carried out by the method 1019.2 in the national military...

AI Technical Summary

Problems solved by technology

[0005] The fluctuation effect has brought great challenges to the total dose radiation test of field effect transistor devices. The traditional test method for large-scale devices does not take quantum effects and fluctuations into account, which is no longer applicable to nanometer devices.

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