Semiconductor device, memory device, and switch device

Abstract

The invention provides a semiconductor device, a memory device, and a switch device. The switch device has a first electrode, a second electrode, and a switching layer between the first and second electrodes. An in situ barrier layer is disposed between the first and second electrodes. The barrier layer comprises a composition including silicon and carbon. The switch device can be used in memory devices.

Description

technical field [0001] The present invention relates to switching devices for use in integrated circuits, including integrated circuit memory devices. Background technique [0002] There are many applications of switching devices such as transistors and diodes in integrated circuits. One type of switching device, known as a bidirectional threshold switch based on bidirectional materials, is characterized by a large resistance drop at the switch threshold voltage and a return to a high resistance blocking state when the voltage drops below the hold threshold . [0003] For example, switching devices have been used in various programmable resistive memory devices including high density array cells organized in a cross-point architecture. For example, some cross-point architectures utilize memory cells that include a phase-change memory element in series with a bidirectional threshold switch (OTS). Other architectures have also been used, including various 2D and 3D array st...

AI Technical Summary

Problems solved by technology

However, even with such techniques, oxidation of bidirectional threshold switches can still be a significant problem

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