Circuits based on magnetic tunnel junctions and devices based on magnetic tunnel junctions

Abstract

The invention provides a circuit based on the magnetic tunnel junction and a device based on the magnetic tunnel junction. The circuit based on the magnetic tunnel junction includes a memory array module, a multi-way bit line selector, an adaptive compensation module and a sensitive amplification module. The circuit based on the magnetic tunnel junction can adaptively compensate the voltage signal required by the input terminal of the sensitive amplifying module according to a reference voltage, so as to speed up the speed at which the sensitive amplifying module outputs a stable voltage difference or a comparison result, and shorten the pre-charging The time and data reading cycle ensure that the corresponding data in the storage array module can be read correctly, improve the data reading speed of the device, and further enable the storage array module to be used for data logic operations, and can ensure the accuracy of logic operations If it is done correctly, the integrated function of storage and calculation can be realized, and the logic operation speed and data throughput of the device can also be improved.

Description

technical field [0001] The invention relates to the technical field of magnetic tunnel junction, in particular to a circuit based on magnetic tunnel junction and a device based on magnetic tunnel junction. Background technology [0002] Magnetic tunnel junction (MTJ) shows different configurations under different working conditions: high resistance state and low resistance state, and the power failure will maintain the previous state. Therefore, it has good application prospects in sensitive amplifier, read head, magnetic random access memory (MRAM), magnetic sensor and so on. [0003] An existing sensitive amplifier based on magnetic tunnel junction, such as Figure 1A It is mainly composed of memory array module 11, multi-channel bit line selector 12 and sensitive amplification module 15. Among them, each storage unit in the storage array module 11 has a magnetic tunnel junction, such as magnetic tunnel junction M01, etc. each magnetic tunnel junction has two states of parallel ...

AI Technical Summary

Problems solved by technology

[0008] Although the above-mentioned traditional scheme can realize the reading function of the storage unit, there are still the following disadvantages: 1) the success rate of the above-mentioned scheme reading is not high, because the calculation in the memory requires V BL and V BLB Stable, thus the stable voltage difference can be read out more reliably, but when the traditional sense amplifier performs in-memory calculation operations, the existence of parasitic resistance and parasitic capacitance on the bit line BL and reference bit line BLB will cause V BL and V BLB Unstable, not even enough to form a voltage difference, which leads to failure to read data

2) Due to V BL and V BLB Unstable, so the time to form a voltage difference is lengthened, even if the data can be read, the speed of reading data is very slow; 3) due to V BL and V BLB Unstable, resulting in the inability of the above-mentioned sensitive amplifier to realize in-memory calculation

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