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Epitaxial layer continuation method

An epitaxial layer and epitaxial wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of lowering the quality of the underlying epitaxial layer, affecting growth, and deteriorating device performance, so as to improve quality and device performance, avoid Metal droplets, the effect of reducing the impact

Pending Publication Date: 2020-09-29
度亘激光技术(苏州)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, after desorption, metal droplets may be formed on the surface of the epitaxial layer, affecting subsequent growth. In addition, desorption needs to be carried out at a higher temperature, which will reduce the quality of the underlying epitaxial layer and lead to deterioration of device performance.

Method used

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Embodiment Construction

[0021] The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application.

[0022] In the description of the present application, the terms "first", "second" and the like are only used for distinguishing descriptions, and do not represent sequence numbers, nor can they be understood as indicating or implying relative importance.

[0023] In the description of the present application, the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "front", "rear", "inner", "outer" etc. are based on the drawings The orientation or positional relationship shown, or the usual orientation or positional relationship of the application product when used, is only for the convenience of describing the application, and does not indicate or imply that the referred device or element must have a specific orientation, in order to Specific orientation ...

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Abstract

The embodiment of the invention provides an epitaxial layer continuation method. The method comprises steps of enabling an epitaxial wafer with growth interruption to be placed in a reaction chamber,and introducing a protection gas; raising the temperature of the reaction chamber to a target temperature; introducing etching gas to etch a growth middle fault of the epitaxial wafer; after the etching of the target depth is completed, stopping introducing the etching gas; and introducing a growth material, and continuously growing the target layer. The method is advantaged in that continuous growth of the epitaxial wafer with interrupted growth is realized, and a rejection rate of epitaxial growth is reduced.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a method for continuing the growth of an epitaxial layer. Background technique [0002] In the process of epitaxial growth of semiconductor materials, equipment failure, circuit failure, insufficient process gas and other reasons may cause the growth interruption of the epitaxial layer due to abnormal growth, resulting in a large number of scrapped epitaxial wafers. In order to minimize losses, manufacturers will use high-temperature annealing to desorb and decompose the epitaxial layer whose growth was interrupted, and then continue to grow. However, metal droplets may be formed on the surface of the epitaxial layer after desorption, affecting subsequent growth. In addition, desorption needs to be carried out at a higher temperature, which will reduce the quality of the underlying epitaxial layer and lead to deterioration of device performance. Contents of th...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/3065H01L33/00
CPCH01L21/3065H01L21/02546H01L21/02543H01L21/0262H01L33/0062H01L33/0095
Inventor 杨国文赵勇明张雨赵卫东
Owner 度亘激光技术(苏州)有限公司