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Manufacturing method of metal electrode

A metal electrode and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., and can solve problems such as affecting TFT yield and prone to sawtooth.

Pending Publication Date: 2020-09-29
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the metal layer is prone to sawtooth on the metal electrode formed by multiple etching processes, which affects the yield of TFT

Method used

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  • Manufacturing method of metal electrode
  • Manufacturing method of metal electrode
  • Manufacturing method of metal electrode

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Embodiment Construction

[0039] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0040] The embodiment of the present application provides a method for manufacturing a metal electrode, which will be described in detail below.

[0041] see figure 1 , figure 1 It is a schematic flow chart of the manufacturing method of the metal electrode provided in the embodiment of the present application. The concrete process of the manufacturing method of this metal electrode can be as follows:

[0042] 101. Provide a substrate layer 10.

[0043] Wherein, the substrat...

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Abstract

The embodiment of the invention provides a manufacturing method of a metal electrode. The manufacturing method of the metal electrode comprises the following steps: providing a substrate layer; forming a metal layer on the substrate layer; forming a photoresist layer with a preset pattern on the metal layer; performing first etching on the metal layer to form a metal layer with a preset pattern; carrying out protection processing on the side edge of the metal layer with the preset pattern; performing second etching on the photoresist layer with the preset pattern to expose the metal layer withthe preset pattern; and performing third etching on the metal layer with the preset pattern to form a metal electrode. According to the scheme, after the metal layer with the preset pattern is formed, the side edge of the metal layer with the preset pattern is protected, the influence of subsequent etching on the side edge of the metal layer with the preset pattern can be avoided, and therefore sawteeth are prevented from appearing on the metal electrode.

Description

technical field [0001] The present application relates to the technical field of etching, in particular to a method for manufacturing a metal electrode. Background technique [0002] In the manufacturing process of a thin film transistor (Thin Film Transistor, TFT), when forming a gate electrode, a source electrode and a drain electrode, it is usually necessary to perform multiple etching processes on the metal layer to form the metal electrode. [0003] Currently, the metal layer is prone to sawtooth on the metal electrode formed through multiple etching processes, thereby affecting the yield of the TFT. Contents of the invention [0004] The embodiment of the present application provides a method for manufacturing a metal electrode, which can effectively prevent sawtooth from appearing on the metal electrode. [0005] The embodiment of the present application provides a method for manufacturing a metal electrode, including: [0006] providing a base layer; [0007] fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3213H01L29/49H01L29/786
CPCH01L21/32134H01L21/32135H01L21/32139H01L29/495H01L29/786
Inventor 谭芳
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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