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Seed crystal laying method for casting monocrystalline silicon and application

A laying method and monocrystalline silicon technology, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of low utilization rate of monocrystalline silicon round rods for seed crystals and high cost of single crystal seed crystals , to achieve the effect of simple and easy operation of the laying method, less dislocations and suppression of dislocations

Active Publication Date: 2020-10-09
LDK SOLAR XINYU HI TECH XINYU CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides a seed crystal laying method and application for single crystal silicon casting to solve the problem of low utilization rate of single crystal silicon round rods for seed crystals and the cost of single crystal seed crystals in the prior art. high problem

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  • Seed crystal laying method for casting monocrystalline silicon and application
  • Seed crystal laying method for casting monocrystalline silicon and application
  • Seed crystal laying method for casting monocrystalline silicon and application

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0029] In order to better understand the single crystal seed crystal laying method for single crystal silicon casting provided by the present invention, the edge seed crystal used therein will be introduced first.

[0030] The edge seed crystal used in the present invention is obtained by cutting the edge of the single crystal silicon round rod after square cutting. Specifically, it can be prepared by the following exemplary methods:

[0031] S101, provide a single crystal silicon round rod with a crystal orientation of the growth plane (100), determine four square root marking lines (can be denoted as C) on the cross section of the single crystal silicon round rod, and mark the four square root The line is translated by ΔL along the direction away from the center of the cros...

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Abstract

The invention provides a single crystal seed crystal laying method for casting monocrystalline silicon, which comprises the following steps: strip-shaped edge surface seed crystals and other strip-shaped seed crystals and other single crystal seed crystals with the same thickness are laid in a clamping strip manner at the bottom of a crucible to form a single crystal seed crystal layer, and the angle deviation of the crystal orientation of the side surfaces of two adjacent single crystal seed crystals is within the range of 4-30 degrees. The side crystal orientations of two adjacent single crystal seed crystals in the formed single crystal seed crystal layer have angle deviation to form a crystal boundary with low crystal boundary energy, dislocation of the single crystals can be inhibitedin a seeding process, and finally, a single crystal silicon ingot with less dislocation and long minority carrier lifetime is prepared. Also provided is a method of casting a monocrystalline siliconingot from the monocrystalline seed layer.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a seed crystal laying method for casting single crystal silicon and its application. Background technique [0002] Since entering this century, the photovoltaic industry has become the fastest growing high-tech industry in the world. Among all kinds of solar cells, crystalline silicon (single crystal, polycrystalline) solar cells occupy an extremely important position. Among them, as one of the main raw materials for the production of solar cells. At present, the casting methods of single crystal silicon mainly include seedless seeding method and seeded crystal seeding method, and seeded crystal seeding method is the most common method for preparing high-quality single crystal silicon. At the bottom of the crucible, the seed crystal is kept incompletely melted during the melting stage, and the seed crystal is grown on the single crystal seed crystal to obtain a single...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/14C30B29/06
CPCC30B11/14C30B29/06
Inventor 何亮罗鸿志周成雷琦李乐李建敏邹贵付
Owner LDK SOLAR XINYU HI TECH XINYU CO LTD
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