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Overlay precision measurement mark and use method thereof

A technology for overlay accuracy and marking, which is applied to measurement devices, optical devices, scattering characteristics measurement, etc., can solve the problems of poor overlay accuracy measurement accuracy, increased production costs, and large footprint for measurement marks. The effect of saving device space, high precision and accuracy

Pending Publication Date: 2020-10-13
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an overlay precision measurement mark and a measurement method, which are used to solve the poor accuracy of the overlay precision measurement and the occupation of the measurement mark in the prior art. The problem of large space and increased production cost

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  • Overlay precision measurement mark and use method thereof
  • Overlay precision measurement mark and use method thereof
  • Overlay precision measurement mark and use method thereof

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Embodiment Construction

[0030] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0031] see Figure 1 to Figure 3 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides an overlay precision measurement mark and a use method thereof, and aims at a photoetching current layer, the characteristics of DBO diffraction measurement are utilized, and anIBO measurement pattern does not participate in a diffraction result, so that the overlay precision measurement mark has higher precision and accuracy compared with traditional IBO measurement. Afteretching, the IBO measurement mark can be used for representing the performance of the overlay precision after etching, and the defect that the DBO measurement mark cannot be used for measurement after etching is overcome. The overlay precision measurement mark can meet the inspection requirement of the overlay precision of the photoetching current layer, can obtain the corresponding overlay precision test result after etching, saves the device space, and provides the overlay precision test requirements in different technological processes.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an overlay precision measurement mark and a use method thereof. Background technique [0002] The development of semiconductor technology is often limited to the development of lithography technology, and the reduction of feature size puts forward stricter requirements for the overlay accuracy (OVL) of silicon wafers. If the overlay accuracy between photolithography layers does not meet the requirements of the design criteria, it will lead to the failure of the front-end device function and the back-end connection function, which will directly cause the loss of product yield. The overlay accuracy requirements of the lithography process are proportional to the technology node of the semiconductor process, that is, higher technology nodes require more precise overlay accuracy. After entering the 28nm technology node, the overlay accuracy requirements for lithography key lay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F9/00G01B11/00G01B11/24G01N21/47
CPCG03F9/7076G03F9/7088G01B11/00G01B11/24G01N21/4788
Inventor 刘必秋
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD