Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as insufficient bottom support and large size differences

Inactive Publication Date: 2020-10-20
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a semiconductor device and its manufacturing method, aiming to solve the problem of large size difference between the bottom and the top of the dummy channel hole during the process of removing the gate sacrificial layer to form the gate layer. Insufficient support at the bottom

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0045] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

[0046] It will be understood that although the terms first, second, etc. may be used herein to describe various components, these components should not be limited by these terms. These terms are used to distinguish one component from another. For example, a first component could be termed a second component, and, similarly, a second component could be termed a first component, without departing from the scope of the present invention.

[0047] It will be understoo...

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The method comprises the following steps: forming a first stack and a first step structure, forming a first virtual channel hole penetrating through the first stack in a step region, forming a second stack and a second step structure, forming a second virtual channel hole penetrating through the second stack in thestep region, and filling a first insulating layer in the first virtual channel hole and the second virtual channel hole. The step structure is formed by etching twice, so that the virtual channel holecan also be formed by etching twice, only half of the stack layer needs to be etched once, the etching difficulty of the virtual channel hole is reduced, the size of the virtual channel hole at the bottom is greatly improved, and the support of the bottom structure is facilitated.

Description

technical field [0001] The present invention generally relates to electronic devices, and more particularly, to a semiconductor device and a method of manufacturing the same. Background technique [0002] The improvement of the storage density of semiconductor devices is closely related to the progress of semiconductor manufacturing technology. As the feature size of semiconductor manufacturing technology becomes smaller and smaller, the storage density of semiconductor devices is getting higher and higher. In order to further increase storage density, semiconductor devices with three-dimensional structures, such as 3D memory devices, have been developed. In order to achieve higher storage density, the number of stacked layers in 3D NAND flash memory has also increased significantly, for example, from 32 layers to 64 layers, and then to 96 layers or even 128 layers and so on. [0003] However, with the increase in the number of stacked layers in a three-dimensional semicond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11582
CPCH10B43/35H10B43/27
Inventor 张中吴林春韩玉辉
Owner YANGTZE MEMORY TECH CO LTD
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