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Method for evaluating reliability of semiconductor power device under accumulated ionizing radiation effect

A technology of radiation effect and evaluation method, applied in the direction of single semiconductor device testing, instruments, measuring electricity, etc., can solve the problem of SiC device reliability hindering the use of spacecraft

Pending Publication Date: 2020-10-23
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the reliability of SiC devices in the radiation environment is the biggest problem hindering their application in spacecraft

Method used

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  • Method for evaluating reliability of semiconductor power device under accumulated ionizing radiation effect
  • Method for evaluating reliability of semiconductor power device under accumulated ionizing radiation effect
  • Method for evaluating reliability of semiconductor power device under accumulated ionizing radiation effect

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Embodiment Construction

[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0038] A schematic diagram of a layer structure according to an embodiment of the invention is shown in the drawing. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or techni...

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Abstract

The invention discloses a method for evaluating the reliability of a semiconductor power device under an accumulated ionizing radiation effect. The method comprises the following steps: applying a preset bias voltage to a sample device; irradiating the sample device to which the bias voltage is applied to a preset dosage point; measuring electrical characteristic parameters of the irradiated sample device; and evaluating the reliability of the sample device under the accumulated ionizing radiation effect based on the electrical characteristic parameters of the sample device before and after irradiation. According to the evaluation method, the reliability of the semiconductor power device under the accumulated ionizing radiation effect can be conveniently and effectively evaluated.

Description

technical field [0001] The invention relates to the technical field of space radiation effect and reinforcement, in particular to a method for evaluating the reliability of semiconductor power devices under the effect of cumulative ionizing radiation. Background technique [0002] Power semiconductor devices are the core components of spacecraft power systems. There are many radiation environments in the space environment, such as cosmic rays, Van Allen radiation belts, solar flares, etc., and there will be a large number of protons, high-energy electrons, Heavy ions and gamma rays, etc., will cause damage to the semiconductor components in the flight devices operating in the space environment, and even cause the device function to fail in severe cases. How to make power semiconductor devices work normally for a longer period of time, increase their reliability, and reduce the failure rate is a problem that should be paid close attention to to improve the reliability of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2621
Inventor 郭红霞顾朝桥潘霄宇周益春张凤祁张文首柳奕天琚安安张鸿钟向丽廖敏
Owner XIANGTAN UNIV