A kind of copper-based diamond gradient heat dissipation material and its preparation method
A technology of heat dissipation material and single crystal diamond, which is applied in cladding optical fiber, optical waveguide and light guide, etc., can solve the problems of damaged diamond thermal conductivity, limited thermal conductivity, and failure to achieve the expected effect, so as to ensure matching degree and guarantee processing The effect of accuracy and cooling efficiency
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Embodiment 1
[0038] In this embodiment, red copper is used as the raw material, single crystal diamond particles with a particle size of 100 μm are used as the diamond raw material, and copper powder with a particle size D50 of 20 μm is used as the sintering raw material. The specific steps are:
[0039] (1) Process the red copper into a semi-circular groove;
[0040] (2) Uniformly hot-press the single crystal diamond on the inner wall of the semi-circular copper groove, and the hot-pressing temperature is 800°C;
[0041] (3) Copper powder is filled in the gap of diamond particles, and compacted with a mold;
[0042] (4) Sintering at a high temperature of 900°C forms a copper-based diamond gradient heat dissipation material assembly.
[0043] After inspection, the thermal conductivity of the diamond-copper composite layer is 592W / m.k.
Embodiment 2
[0045] In this embodiment, red copper is used as the raw material, single crystal diamond particles with a particle size of 150 μm are used as the diamond raw material, and copper powder with a particle size D50 of 50 μm is used as the sintering raw material. The specific steps are:
[0046] (1) Process the red copper into a semi-circular groove;
[0047] (2) Uniformly hot-press the single crystal diamond on the inner wall of the semi-circular copper groove, and the hot-pressing temperature is 750°C;
[0048] (3) Copper powder is filled in the gap of diamond particles, and compacted with a mold;
[0049] (4) Sintering at a high temperature of 850°C forms a copper-based diamond gradient heat dissipation material assembly.
[0050] After inspection, the thermal conductivity of the diamond-copper composite layer is 581W / m.k.
Embodiment 3
[0052] In this embodiment, red copper is used as the raw material, single crystal diamond particles with a particle size of 100 μm are used as the diamond raw material, and copper powder with a particle size D50 of 20 μm is used as the sintering raw material. The specific steps are:
[0053] (1) Process the red copper into a semi-circular groove;
[0054] (2) uniformly hot-press the single crystal diamond on the inner wall of the semi-circular copper groove, and the hot-pressing temperature is 850°C;
[0055] (3) Copper powder is filled in the gap of diamond particles, and compacted with a mold;
[0056] (4) Sintering at a high temperature of 950°C forms a copper-based diamond gradient heat dissipation material assembly.
[0057] After inspection, the thermal conductivity of the diamond-copper composite layer is 610W / m.k.
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