Silicon-based deep ultraviolet avalanche photodiode and its preparation method

An avalanche photoelectric and deep ultraviolet technology, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of large lattice mismatch between AlN and GaN, and no one-dimensional deep ultraviolet avalanche diode is prepared, so as to improve the crystal quality and have a Facilitate the preparation and release of epitaxial stress

Active Publication Date: 2022-04-19
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, AlN and GaN have a large lattice mismatch and are prone to defects. At the same time, according to the search on the Web of Science platform, there is no public report on the preparation of one-dimensional deep ultraviolet avalanche diodes on silicon substrates.

Method used

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  • Silicon-based deep ultraviolet avalanche photodiode and its preparation method
  • Silicon-based deep ultraviolet avalanche photodiode and its preparation method
  • Silicon-based deep ultraviolet avalanche photodiode and its preparation method

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Embodiment 1

[0040] First, take a piece of n-type Si substrate, and clean the surface of the Si substrate with HF acid, acetone and ethanol solution for 5 min respectively.

[0041] Then, the Si substrate is placed in a molecular beam epitaxy (Molecular beam epitaxy, MBE) growth chamber for epitaxial growth.

[0042] Specifically include the following steps:

[0043] In the first step, an AlN buffer layer with a thickness of about 2 nm is grown on Si, such as figure 1 shown.

[0044] In the second step, a layer of highly doped (Si is the dopant source) n-type AlN nanocolumns 10 with a height of about 300 nm is grown on the AlN buffer layer to form the first AlN nanocolumns.

[0045] In the third step, a layer of unintentionally doped (i.e. low doped) Al with a thickness of 80 nm is grown on the first AlN nanocolumn. 0.5 Ga 0.5 N nano-column 11, re-grow a p-type AlN nano-column 12 with a thickness of 100nm of high doping (Mg is the dopant source); 1-m Ga m The value of m in the N nano...

Embodiment 2

[0048] First, take an n-type Si substrate, and clean the surface of the Si substrate with HF acid, acetone and ethanol solutions for 10 min respectively.

[0049] Then, the Si substrate was placed in an MBE growth chamber for epitaxial growth.

[0050] Specifically include the following steps:

[0051] In the first step, an AlN buffer layer with a thickness of about 3 nm is grown on Si, such as figure 2 shown.

[0052] The second step is to grow a layer of highly Si-doped n-type GaN nanocolumns with a height of about 100 nm on the AlN buffer layer (the doping concentration is 5×10 19 / cm -3 )20, and then grow a layer of highly Si-doped Al with a height of 40nm 1-m Ga m N nanocolumns (doping concentration is 2×10 19 / cm -3 )21, in which the content of Al components increases gradually along the growth direction, and then grows a layer of highly Si-doped n-type AlN nanocolumns with a height of about 50 nm (doping concentration 3×10 19 / cm -3 )twenty two.

[0053] In t...

Embodiment 3

[0057] First, take an n-type Si substrate, and wash the surface of the Si substrate with acetone and ethanol solutions for 15 minutes respectively.

[0058] Then, the Si substrate was placed in an MBE growth chamber for epitaxial growth.

[0059] Specifically include the following steps:

[0060] In the first step, an AlN buffer layer with a thickness of about 2 nm is grown on Si, such as image 3 shown.

[0061] In the second step, a layer of Si-doped n-type GaN nanocolumns 30 with a height of about 150 nm is grown on the AlN buffer layer, and then a layer of Si-doped Al with a height of 200 nm is grown. 0.4 Ga 0.6 N nanopillars 31 .

[0062] The third step is to grow a layer of unintentionally doped (ie low doped) Al with a thickness of 120nm. 0.55 Ga 0.45 N nanopillars 32 .

[0063] The fourth step is to grow a layer of Mg-doped p-type Al with a thickness of 60nm 0.5 Ga 0.5N nanopillars33.

[0064] In the fifth step, a layer of unintentionally doped Al with a thic...

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Abstract

The invention discloses a silicon-based deep ultraviolet avalanche photodiode and a preparation method thereof. The preparation method comprises: S1, providing a Si substrate; S2, sequentially stacking and growing an AlN buffer layer on the Si substrate; 一Al 1‑m Ga m N nanopillars, second Al 1‑x Ga x N nanocolumn, and the 3rd Al 1‑z Ga z N nanocolumns, wherein, 0≤m≤1, 0≤x<0.8, 0≤z<0.8; according to actual needs, the fourth Al can also be stacked and grown sequentially after the step S2 1‑a Ga a The N nanocolumn and the fifth AlN nanocolumn, wherein, 0≦a<0.8. The preparation method of the avalanche diode provided by the present invention, on the one hand, uses the AlN nano-column to significantly reduce the interference of light ultraviolet light, improve the crystal quality, thereby improving the accuracy and sensitivity of the detector; on the other hand, the silicon substrate can simplify the manufacture of the device The technological process is easy for later integrated processing, which is very conducive to reducing costs.

Description

technical field [0001] The invention belongs to the field of photodiodes, and specifically relates to a silicon-based deep ultraviolet avalanche photodiode and a preparation method thereof. Background technique [0002] Direct irradiation of deep ultraviolet rays (UVC, 200-280nm) is very harmful to the human body. Short-term exposure can burn the skin, and continuous or high-intensity exposure can cause skin cancer. Its penetrating ability is very weak, and it will be almost completely absorbed by the ozone layer when it passes through the earth's atmosphere, and its intensity at the surface of the earth can be ignored. This band is also commonly referred to as the "solar blind" band. Because there is no background interference of sunlight in the deep ultraviolet band, deep ultraviolet photodiodes can be used as detectors in missile detection, fire detection, radiation detection, and secure communication. The application market is huge. [0003] In practical applications, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0304H01L31/0352H01L31/107B82Y40/00
CPCH01L31/1852H01L31/1848H01L31/107H01L31/035281H01L31/035227H01L31/03044B82Y40/00
Inventor 赵宇坤陆书龙边历峰邱海兵
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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