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Method and system for preparing titanium dioxide exposed high active surface by using femtosecond laser

A technology of femtosecond laser and titanium dioxide, applied in the field of femtosecond laser application

Active Publication Date: 2021-07-06
TSINGHUA UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to propose a method and system for preparing titanium dioxide with exposed high-activity surface by femtosecond laser, so as to solve the problem of obtaining anatase titanium dioxide with exposed {010} crystal plane after processing solid titanium dioxide in traditional methods problem

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  • Method and system for preparing titanium dioxide exposed high active surface by using femtosecond laser
  • Method and system for preparing titanium dioxide exposed high active surface by using femtosecond laser
  • Method and system for preparing titanium dioxide exposed high active surface by using femtosecond laser

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Embodiment 1

[0033] (1) Utilize the anodic oxidation method to prepare a solid titanium dioxide nanotube array film on the surface of the titanium sheet 1, the process is as follows:

[0034] (1-1) A titanium piece whose surface is polished and has a purity of 99% or more is cut into a rectangle of 2 cm×4 cm. Put the titanium sheet into ethanol and deionized water and ultrasonically clean it three times, each time for 10 minutes, and dry it in a blast drying oven for later use;

[0035] (1-2) Measure water and ethylene glycol according to the volume ratio of 1:49, and prepare solution A;

[0036] (1-3) Slowly add ammonium fluoride with a mass fraction of 0.5% to solution A, and stir until the ammonium fluoride is completely dissolved to obtain solution B;

[0037] (1-4) Using the solution B in step (1-3), the titanium sheet 1 in step (1-1) is used as the anode, and the platinum mesh is used as the cathode, and the platinum mesh and the titanium sheet 1 are placed opposite each other at a di...

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Abstract

The invention provides a method and system for preparing titanium dioxide exposed to a high-activity surface by using a femtosecond laser, and belongs to the technical field of femtosecond laser applications. In the invention, a solid titanium dioxide nanotube array film is prepared on the surface of a titanium sheet by an anodic oxidation method, and then the anatase titanium dioxide with an exposed {010} crystal plane is obtained by scanning a femtosecond laser line by line. Compared with the traditional method, the invention has the advantages of direct processing of solid titanium dioxide, low processing environment requirements, high energy utilization rate, fast speed and the like. The anatase titanium dioxide with exposed {010} crystal face prepared by the method and system of the present invention can be used for photocatalysis and solar cell preparation, which is beneficial to obtain high photocatalysis or photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the field of femtosecond laser application technology, and in particular relates to a method and system for preparing titanium dioxide exposed to a high-activity surface by using a femtosecond laser. Background technique [0002] Efficient use of solar energy is an important means to solve the current energy and environmental problems faced by human beings. Titanium dioxide (TiO 2 ) is the most commonly used semiconductor photocatalytic material. Because of its high stability, non-toxicity, and low cost, it has been widely used in the fields of photoelectrochemical hydrolysis hydrogen production, photocatalytic hydrolysis hydrogen production, and photocatalytic degradation of organic pollutants. However, the catalytic performance of titanium dioxide is limited by the absorption of ultraviolet light and the rapid recombination of photogenerated electrons and holes. For this reason, researchers have carried out a lot of research...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D11/26
CPCC25D11/26
Inventor 姜澜闫剑锋乔明
Owner TSINGHUA UNIV
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