Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern

A technology of photoresist, photoresist layer, applied to compound, photoresist composition containing same, photoresist pattern containing same and for manufacturing photoresist In the field of patterns, it can solve the problems of sensitivity reduction, resolution and line width roughness, etc., and achieve the effect of improving line width roughness, high resolution, and enhancing contrast

Pending Publication Date: 2020-10-30
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In view of the above, the development of EUV photoresists is required for high integration of semiconductors, however, some materials currently developed have problems to be solved, such as improving sensitivity reduction, resolution, and line width roughness (LWR)

Method used

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  • Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern
  • Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern
  • Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern

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Embodiment approach

[0229] Hereinafter, the specification will be described in detail with reference to the embodiments to specifically describe the specification. However, the embodiments according to the present specification can be modified into various other forms, and the scope of the present specification should not be construed as being limited to the embodiments described below. The embodiments of this specification are provided to more fully describe this specification to those skilled in the art.

preparation example

[0231]

[0232]

[0233] In the synthesis of the compounds, the compounds were synthesized using the substituents described in Table 1 below.

[0234] [Table 1]

[0235] R 1

R 2

Yield(%) Preparation Example 1 H H 95 Preparation example 2 CH 3

H 93 Preparation example 3 Ph H 94 Preparation Example 4 CH 3

CH 3

93 Preparation Example 5 CH 3

4-CO 2 CH 3 P-C 6 h 4

90 Preparation example 6 Ph 2-pyridyl 91

[0236] Preparation of Intermediate 1

[0237]

[0238] Cyclopentadiene (132.2g, 2.0mol), 2-carboxyethyl acrylate (130.1g, 1.0mol) and 4-methoxyphenol (2.4g, 0.02mol) were introduced into the high-pressure reactor, and the resulting Reacted at 180 °C for 18 hours, then vacuum distilled to obtain intermediate 1 (190 g, 97%).

[0239] 1H-NMR (CDCl3): (ppm) δ6.3 (dd, H), 6.2 (dd, H), 3.6 (s, 3H), 3.34 (dd, H), 3.29 (dd, H), 3.2-3.1 (m,2H), 1.5(m,H), 1.4-1.3(br,H)

[...

preparation example 1

[0262]

[0263] 1,2,4,5-Tetrazine (4.5 g, 0.055 mol) and Intermediate 3 (30 g, 0.05 mol) were introduced into dichloromethane (1 L), and the resultant was reacted at room temperature for 12 hours. After the reaction was completed, diethyl ether was introduced thereto to form a precipitate, which was filtered and then dried to obtain A1 (31.2 g, 95%).

[0264] 1H-NMR (DMSO-D6): (ppm) δ = 7.5 (d, H), 7.4-7.1 (m, 15H), 5.7 (s, H), 4.5 (m, 2H), 3.7 (s, 3H) , 3.1-2.8(m, 3H), 2.3-2.2(m, H), 2.1-2.0(m, H), 1.7-1.4(m, 2H)

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Abstract

The present invention relates to a compound, a photoresist composition comprising same, a photoresist pattern comprising same, and a method for manufacturing a photoresist pattern.

Description

technical field [0001] This application claims priority and benefit from Korean Patent Application No. 10-2018-0120978 filed with the Korean Intellectual Property Office on October 11, 2018, the entire contents of which are incorporated herein by reference. [0002] The present specification relates to compounds, photoresist compositions comprising the same, photoresist patterns comprising the same, and methods for preparing photoresist patterns. Background technique [0003] Photoresist compositions are used in microelectronic device processes for the manufacture of small electronic components, such as in the manufacture of computer chips and integrated circuits. Microelectronic device processes using substrate materials such as silicon-based wafers for the manufacture of integrated circuits are generally as follows. [0004] A photoresist layer of a thin coating film is formed on a substrate using a photoresist composition or a photoresist film, and the resultant is baked...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D237/24G03F7/20G03F7/26G03F7/004G03F7/032
CPCC07D237/24C07D237/26G03F7/0045G03F7/038G03F7/0395G03F7/0397C07C381/12C08F220/281C09D133/14C09D145/00C08F220/1811C08F220/1804C08F220/06C08F232/08C08F220/382C08L45/00C08L33/14G03F7/032G03F7/20G03F7/26G03F7/033
Inventor 安俊炫林敏映
Owner LG CHEM LTD
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