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Electronic power switch drive module

A switching driver and electronic power technology, which is applied in the direction of electronic switch, output power conversion device, AC power input conversion to DC power output, etc. It can solve the problems of energy consumption, heat and electricity compensation, poor frequency response of resistor shunts, etc.

Pending Publication Date: 2020-11-03
LEM INT SA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, measuring the shunt resistance according to the output voltage range will result in energy dissipation and possible thermoelectric compensation
Resistive shunts may also have poor frequency response due to parasitic mutual inductance

Method used

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  • Electronic power switch drive module
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Examples

Experimental program
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Embodiment Construction

[0044] Referring to these figures, a power semiconductor unit 1 comprises a power semiconductor module 3 and an electronic power switch driver module 2 mounted and connected to the power semiconductor module.

[0045] The power semiconductor module 3 may for example be in the form of an insulated gate bipolar transistor (IGBT) half-bridge module, comprising a power input 5 and a power output 7 . The power input 5 may comprise input DC (direct current) terminals 5a-, 5a+ for connection to positive and negative conductors of a DC power supply. The power output 7 comprises at least one output terminal 7a for at least one phase of the alternating voltage current. The waveform of the output current can have frequency and amplitude of various shapes depending on the intended application of the power semiconductor unit. Power semiconductor units can be used, for example, in inverters for motor drives, in inverters for grid-connected photovoltaic power plants, in frequency converters...

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PUM

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Abstract

An electronic power switch drive module (2) for a power semiconductor unit (1), comprising a gate drive (6) and a current transducer (8) mounted on one or more circuit boards (4), the gate drive comprising at least one circuit portion (20) for controlling at least one transistor (13a) of a power semiconductor module (3) of said power semiconductor unit (1), the current transducer (8) configured tobe coupled to an output (7) of the power semiconductor module (3) for measuring an output current of the power semiconductor module, said at least one circuit portion (20) connected to an output potential of the output current to be measured. The current transducer comprises at least one magnetic field sensor (16a, 16a', 16b), the current transducer being connected to said at least one circuit portion of the gate drive at said output potential in a non-isolated manner.

Description

technical field [0001] The invention relates to a power semiconductor unit and an electronic power switch driver module therefor. Background technique [0002] In power electronics, electronic switches are used to make and break electrical connections in circuit arrangements such as half-bridges, anti-parallel or series switches, or simply to connect loads to power sources, e.g. The megahertz frequency range is switched periodically. Electronic switches for power semiconductor units include IGBTs (Insulated Gate Bipolar Transistors), FETs (Field Effect Transistors), MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and can be arranged in devices such as half-bridge, three-level, matrix and Various known semiconductor switches in topologies such as other such semiconductor switch structures. [0003] For many power semiconductor units it is advantageous to have very fast switching in order to reduce the transition time between on and off states where losses can o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/082H03K17/90G01R15/18G01R15/20H02M7/00
CPCH03K17/0828H03K17/90H03K2217/0027G01R15/181G01R15/202G01R15/207H02M1/0009
Inventor D·施莱夫利S·特伦伯特
Owner LEM INT SA
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