Method for correcting imaging direction of TEM sample

A positive direction, sample technology, applied in the direction of using wave/particle radiation for material analysis, measurement devices, instruments, etc., can solve the problems of low measurement efficiency, measurement error, etc., to facilitate analysis and measurement, reduce inconvenience and Error, avoid the effect of variability

Pending Publication Date: 2020-11-06
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention is to provide a low-cost, efficient and convenient method for correcting the imaging direction of TEM samples, which can solve the problems of measurement errors and low measurement efficiency caused by the disorder of sample imaging directions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for correcting imaging direction of TEM sample
  • Method for correcting imaging direction of TEM sample
  • Method for correcting imaging direction of TEM sample

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Methods for correcting the imaging direction of TEM samples, such as image 3 As shown, the specific steps are as follows:

[0041] Step S1, flatly placing the carbon support film under the field of view of an optical microscope (Optical Microscope, OM), and defining the positive direction of the carbon support film;

[0042] Step S2, based on the orientation of the carbon support film in the positive direction, determine the target mark area at the edge of the grid of the carbon support film;

[0043] Step S3, forming a positioning mark visible to the naked eye in the target mark area;

[0044] Step S4, taking out the TEM sample made by the focused ion beam, and placing it on the carbon support film in sequence in a uniform orientation with the positioning mark as a reference;

[0045] Step S5, putting the carbon support film carrying the TEM sample into the TEM sample holder according to the defined positive direction, and making the positioning mark at the designat...

Embodiment 2

[0050] On the basis of the first embodiment, this embodiment further describes the specific implementation of the method for correcting the imaging direction of the TEM sample.

[0051] In this embodiment, the material of the carrier grid in the carbon support film is copper.

[0052] The method for correcting the imaging direction of a TEM sample in this embodiment, the specific steps are as follows:

[0053] Step 1, placing the carbon support film flatly under the field of view of the optical microscope, and defining the positive direction of the carbon support film;

[0054] Such as Figure 4 As shown, the positive direction defined in this embodiment is that the corner of the rectangle is at the bottom right;

[0055] Step 2, based on the orientation of the carbon support film in the positive direction, determine the target mark area at the edge of the grid of the carbon support film;

[0056] Such as Figure 5 As shown, in this embodiment, after defining the positive ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for correcting the imaging direction of a TEM sample. The method comprises the steps: S1, flatly placing a carbon support film under the visual field of an optical microscope, and defining the positive direction of the carbon support film; S2, determining a target marking area at the edge of a carrier net of the carbon support film by taking the direction of the carbon support film in the positive direction as a reference; S3, forming a macroscopic positioning mark in the target marking area; S4, taking out the TEM sample prepared from a focused ion beam, and sequentially placing the TEM sample on the carbon support film according to a unified orientation by taking the positioning mark as a reference; and S5, putting the carbon support film for bearing theTEM sample into a TEM sample rod according to a defined positive direction, and enabling the position mark to be located at a specified position of the TEM sample rod. According to the method, the variability of the imaging angle of the TEM sample caused by the uncertainty of the direction of the carbon support film can be effectively avoided, so that the inconvenience and errors during analysis and measurement are reduced.

Description

technical field [0001] The invention relates to the field of failure analysis of semiconductor chip manufacturing, in particular to a method for correcting the imaging direction of a TEM sample. Background technique [0002] In the field of semiconductor integrated circuit manufacturing, as the chip manufacturing process becomes smaller and smaller, SEM (Scanning Electron Microscope, scanning electron microscope) is increasingly unable to meet the accuracy required for analysis, so the use of TEM (Transmission Electron Microscope, transmission electron microscope ) is more and more dependent on accurate measurement, and FIB (Focused Ion beam, focused ion beam) is the most efficient means of preparing TEM samples. After preparing TEM samples with FIB, it has become a commonly recognized method in the field of semiconductors to carry out TEM observations with the help of carbon support films to support TEM samples. [0003] The conventional method of preparing TEM samples is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/225G01N23/2204
CPCG01N23/225G01N23/2204G01N2223/07G01N2223/102
Inventor 史燕萍高金德陈柳
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap