Semiconductor device

Abstract

The invention provides a semiconductor device. The semiconductor device includes a semiconductor layer having a first surface and a second surface opposite to the first surface, an active pattern on the first surface, the active pattern including a source / drain region, a power rail electrically connected to the source / drain region, and a power delivery network on the second surface, the power delivery network electrically connected to the power rail. The semiconductor layer includes an etch stop dopant that has a maximum concentration at the second surface.

Description

[0001] Cross References to Related Applications [0002] This patent application claims priority from Korean Patent Application No. 10-2019-0057543 filed with the Korean Intellectual Property Office on May 16, 2019, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0003] Example embodiments of inventive concepts relate to semiconductor devices, and more particularly, to semiconductor devices including field effect transistors and methods of manufacturing the same. Background technique [0004] Semiconductor devices are widely used in the electronics industry due to their small size, multifunctional properties, and / or low manufacturing costs. Semiconductor devices may be classified as any of semiconductor memory devices that store logical data, semiconductor logic devices that process logical data, and hybrid semiconductor devices that have both the functions of a semiconductor memory device and the functions of a semiconductor lo...

AI Technical Summary

Problems solved by technology

In order to meet these demands, semiconductor devices have been highly integrated, and the structure of semiconductor devices has become increasingly complex

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