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A kind of manufacturing method of fcob storage device and capacitor thereof

A technology for storage devices and manufacturing methods, applied in semiconductor devices, electric solid-state devices, circuits, etc., can solve the problems of large area and limited integration of ferroelectric storage units

Active Publication Date: 2021-12-24
WUXI SMART MEMORIES TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

like figure 2 As shown, the existing planar ferroelectric capacitor 102 occupies a relatively large area, which limits the integration of the ferroelectric memory cell

Method used

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  • A kind of manufacturing method of fcob storage device and capacitor thereof
  • A kind of manufacturing method of fcob storage device and capacitor thereof
  • A kind of manufacturing method of fcob storage device and capacitor thereof

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Embodiment Construction

[0050] In the following description, the present invention is described with reference to various examples. One skilled in the art will recognize, however, that the various embodiments may be practiced without one or more of the specific details, or with other alternative and / or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail so as not to obscure aspects of the various embodiments of the invention. Similarly, for purposes of explanation, specific quantities, materials and configurations are set forth in order to provide a thorough understanding of embodiments of the invention. However, the invention may be practiced without these specific details. Furthermore, it should be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.

[0051] In this specification, reference to "one embodiment" or "the...

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Abstract

The invention discloses a manufacturing method of a storage device, comprising: providing a semiconductor substrate, forming a first dielectric layer on the semiconductor substrate, forming a conductive column on the first dielectric layer, and forming a second dielectric layer on the first dielectric layer , forming conductive interconnections and metal bit lines on the second dielectric layer, forming a third dielectric layer on the second dielectric layer, forming capacitor contact pads on the third dielectric layer, forming a fourth dielectric layer on the third dielectric layer, and The fourth dielectric layer forms a ferroelectric capacitor, a fifth dielectric layer is formed on the fourth dielectric layer, and a metal plate line connected to electrodes on the capacitor is formed on the fifth dielectric layer.

Description

technical field [0001] The invention relates to the field of manufacturing of memories. Specifically, the present invention relates to a method for manufacturing an FCOB (Ferroelectric Capacitor Over Bitline) storage device and a capacitor thereof. Background technique [0002] Ferroelectric memory is a non-volatile memory of a special process. When an electric field is applied to the ferrotransistor, the central atom follows the field and stops at the first low-energy state position, while when an electric field reversal is applied to the same ferrotransistor, the central atom moves in the crystal along the direction of the electric field and stops at The second lowest energy state. A large number of central atoms move and couple in the crystal unit cell to form ferroelectric domains, and the ferroelectric domains form polarized charges under the action of an electric field. The polarization charge formed by the ferroelectric domain reversal under the electric field is h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11507H01L27/11514H10B53/30H10B69/00H10B53/20
CPCH10B53/20H10B53/30
Inventor 华文宇陶谦刘藩东夏季
Owner WUXI SMART MEMORIES TECH CO LTD