SOI device capable of improving self-heating effect and preparation method thereof

Abstract

The invention provides an SOI device capable of improving a self-heating effect and a preparation method thereof. The preparation comprises the steps: providing a semiconductor substrate with a cavitystructure, enabling the cavity structure to be located in a top semiconductor layer and exposing an insulating layer, preparing an active region coating the cavity structure, and preparing a gate electrode structure, a source-drain region and a source-drain electrode. The SOI substrate with the nanoscale cavity is adopted, the cavity structure is located in the top semiconductor layer, the size of the cavity is effectively reduced, the cavity is in the nanoscale size in the channel length direction, the heat dissipation path of the device cannot be obviously blocked, and compared with a device with a large-size cavity, the self-heating effect is relieved. Theoretically, the thickness of the top semiconductor layer above the cavity can reach 2 nm, it is guaranteed that top silicon is not damaged, a channel can be completely exhausted by a gate electrode, and the floating body effect is effectively restrained. The cavity is located in the top semiconductor layer and makes contact with the insulating layer, parasitic charges in the insulating layer cannot be introduced into a parasitic channel at the bottom of the top semiconductor layer, and the total dose radiation effect is effectively restrained.

Description

technical field [0001] The invention belongs to the field of semiconductor device design and manufacture, in particular to an SOI device for improving self-heating effect and a preparation method thereof. Background technique [0002] A cavity is prepared inside the semiconductor substrate. The cavity can play the role of insulation. Semiconductor functional devices can be prepared on the cavity, which can maintain the good sub-threshold characteristics of the device. For example, in order to improve the performance and performance-price ratio of integrated circuit chips, reducing the feature size of the device to increase the integration level is a main way. However, as the size of the device shrinks, power consumption and leakage current become the most concerned issues. Silicon-on-insulator SOI (Silicon-On-Insulator) structure has become the preferred structure of deep submicron MOS devices because it can well suppress the short channel effect and improve the ability of ...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an SOI device with improved self-heating effect and its preparation method, which is used to solve the problem of self-heating effect in devices with substrates with cavity structures in the prior art, And the floating body effect of the device and the total dose radiation effect are difficult to be effectively improved.

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