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Inductor structure and method of forming the same

A technology of inductance and shielding structure, applied in the direction of inductors, circuits, electrical components, etc., can solve the problems of poor inductance structure performance, affecting the performance of integrated circuits, etc., to achieve the effect of increasing resistance, increasing coupled inductance, and suppressing interactive noise

Active Publication Date: 2022-07-05
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, cross talk noise is likely to be generated between the inductor and the substrate or other devices produced by the existing integrated process, which affects the performance of the integrated circuit.
[0005] However, the performance of the inductive structures formed by the prior art is poor

Method used

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  • Inductor structure and method of forming the same
  • Inductor structure and method of forming the same
  • Inductor structure and method of forming the same

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] As mentioned in the background art, the performance of the prior art inductive structures is poor.

[0035] An inductive structure, refer to figure 1 and figure 2 , figure 2 for figure 1 The sectional view along the cutting line M-M in the middle, figure 1 for figure 2 The top view of the middle Z direction after removing the dielectric layer, including: a substrate 100, the surface of the substrate 100 has a ground terminal 101; a plurality of stacked shielding layers 110 located above the substrate, the upper and lower shielding layers 110 are electrically connected to each other, and the bottom shielding layer 110 The layer 110 is electrically connected to the ground terminal 101 , each shield layer 110 includes a number of semicircular metal wires 111 arranged in parallel and concentrically distributed, and each layer of the shield layer includes a number of coil areas, and a number of semicircle metal lines in the coil area 11 The lines 111 are separated...

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PUM

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Abstract

An inductor structure and a method for forming the same, comprising: a substrate, the surface of the substrate has a ground terminal; a shielding structure on the substrate, the shielding structure comprising: a plurality of overlapping shielding layers, the shielding layer on the bottommost layer and the shielding layer The ground terminals are electrically connected, and the two adjacent shielding layers are electrically connected to each other. Each shielding layer includes a parallel coil group and a series coil group surrounding the parallel coil group. A plurality of first wires distributed concentrically, the series coil group includes a plurality of second wires arranged in parallel and concentrically distributed, and each layer of the shielding layer includes a plurality of coil areas, and the first wires in adjacent coil areas are separated from each other , the second wires in adjacent coil regions are separated from each other, and several first wires in each coil zone are connected in parallel, and several second wires in each coil zone are connected in series; the inductance layer is located on the shielding structure. The performance of the inductive structure is improved.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to an inductor structure and a method for forming the same. Background technique [0002] Inductors are generally composed of wires wound in a spiral shape, and are widely used in radio frequency circuits of communication equipment, such as mobile phones, wireless circuits, wireless modems, and other communication equipment. [0003] With the advancement of integrated circuit technology, the inductor can be manufactured by using the integrated circuit technology, and the inductor and other components can be integrated on a single chip, so as to reduce the cost of manufacturing the circuit. At present, a common structure of an inductor integrated in an integrated circuit process is a convoluted metal layer. [0004] However, cross talk noise is easily generated between the inductor fabricated by the existing integration process and the substrate or with other devic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L23/552H01L23/64
CPCH01L23/5227H01L23/552H01L23/645H01L28/10
Inventor 王西宁程仁豪
Owner SEMICON MFG INT (SHANGHAI) CORP