Permanent magnet device and magnetron sputtering equipment

Abstract

The invention relates to the field of semiconductor manufacturing equipment, in particular to a permanent magnet device and magnetron sputtering equipment. The permanent magnet device comprises a permanent magnet assembly, a first driving mechanism and a second driving mechanism, and the first driving mechanism is in transmission connection with the permanent magnet assembly and used for driving the permanent magnet assembly to rotate to form a rotating magnetic field; the second driving mechanism is in transmission connection with the first driving mechanism and used for driving the first driving mechanism to move to adjust the included angle of the permanent magnet assembly relative to the horizontal plane. The permanent magnet device is easy to operate when the angle of the permanent magnet assembly is adjusted, the accuracy can be guaranteed, and the first driving mechanism can also be used for driving the permanent magnet assembly to stably form a rotating magnetic field after theangle of the permanent magnet assembly is adjusted. The magnetron sputtering equipment provided with the permanent magnet device provided by the invention can be used for uniformly coating a wafer soas to ensure the coating quality of the wafer.

Description

Technical field[0001]The invention relates to the field of semiconductor manufacturing equipment, in particular to a permanent magnet device and magnetron sputtering equipment.Background technique[0002]Magnetron sputtering is a kind of physical vapor deposition (Physical Vapor Deposition, PVD). The general sputtering method can be used to prepare a variety of materials such as metals, semiconductors, and insulators, and has the advantages of simple equipment, easy control, fast sputtering rate, large coating area and strong adhesion. Magnetron sputtering introduces a magnetic field on the surface of the target cathode to allow electrons to form a spiral trajectory around the lines of magnetic force. The magnetic field confines the charged particles to increase the ionization rate of the gas and increase the plasma density to increase the sputtering rate.[0003]The magnetic field introduced by the magnetron sputtering equipment is realized by permanent magnet components. Most permanen...

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Problems solved by technology

Most of the permanent magnet components are fixed, and the wafer coating has very high requirements on the thickness and uniformity of the metal film to be coated. The direction of the magnetic field generated by the fixed permanent magnet components cannot effectively meet the actual sputtering requirements. This will lead to uneven thickness of the metal film coated on the wafer surface, which will affect the quality of the coating

[0004] The permanent magnet assembly of a small number of magnetron sputtering equipment can rotate in the horizontal plane, but the angle of the permanent magnet assembly remains unchanged when rotating. If you have to change the angle of the permanent magnet assembly, you can only adjust it manually. It is very cumbersome to manually adjust the angle of the permanent magnet assembly, and the accuracy is difficult to guarantee. Moreover, it is difficult to ensure that the driving mechanism drives the permanent magnet assembly to form a stable rotating magnetic field after the angle adjustment of the permanent magnet assembly.

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