Method for purifying indium from indium-tin alloy

An indium-tin alloy and metal technology, applied in the field of separation and recovery of rare alloys, can solve problems such as high labor costs, high processing costs, and complicated processes, and achieve the effects of reducing processing costs, reducing labor costs, and simple processes

Active Publication Date: 2020-12-25
中山智隆新材料科技有限公司
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Problems solved by technology

However, a large amount of electrolytic waste liquid and waste residue will be formed, which will cause greater pollution to the environment and higher processing costs.
At the same time, the process is relatively complicated, requiring the construction of special electrolytic cells and professional staff on duty, and the labor cost is relatively high

Method used

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  • Method for purifying indium from indium-tin alloy

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Embodiment Construction

[0024] The present invention is described in further detail below in conjunction with embodiment.

[0025] Such as figure 1 As shown, a kind of indium-tin alloy purification device provided by the present invention includes a vacuum furnace 5 providing a purification reaction place, and the vacuum furnace 5 has a door 8, N 2 The gas cylinder 1 and the vacuum pump 11 are respectively connected to the vacuum furnace 5 through a pipeline provided with a ball valve switch. The vacuum furnace 5 is provided with a heating device 7 for heating the alloy, and an indium metal recovery target 6 is provided on the top of the vacuum furnace 5. It also includes A cooling device 4 for cooling the indium metal recovery target 6 and a vacuum gauge 9 are arranged on the pipeline connecting the vacuum pump 11 and the vacuum furnace 5 .

[0026] In the embodiment, the indium tin alloy is put into the heating device 7 in the vacuum furnace for heat treatment; the heating device 7 is an electric ...

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Abstract

The invention discloses a method for purifying indium from indium-tin alloy. A purification device is manufactured by using the method, the purification device comprises a vacuum furnace for providinga purification reaction place, the vacuum furnace is provided with a bin gate, an N2 gas cylinder and a vacuum pump are connected with the vacuum furnace through a pipeline provided with a ball valveswitch, a heating device for heating the alloy is arranged in the vacuum furnace, an indium metal recovery target is arranged at the top of the vacuum furnace, the purification device further comprises a cooling device and a vacuum degree meter, wherein the cooling device is used for cooling the indium metal recovery target, and the vacuum degree meter is arranged on the pipeline through which the vacuum pump is connected with the vacuum furnace. The method has the advantages of no generation of waste liquid and large amount of waste residue, environmental protection, high efficiency, and reduction of the treatment cost. The method has the advantages that the process is simple, special buildings are not needed, professional operation is not needed, the labor cost is reduced, and the purity of the extracted indium metal is high and can reach 99.99% or above.

Description

technical field [0001] The invention relates to the field of separation and recovery of rare alloys, and is aimed at related technologies of indium resource recovery, especially a method for sublimation separation and purification of indium metal from indium tin alloy obtained by reducing ITO waste targets. Background technique [0002] ITO target is an indium tin composite oxide ceramic material, which is widely used in the fields of transparent electrodes of flat panel display devices, solar cells, anti-fog and anti-frost glass of aircraft and high-end automobiles, and is a very important optoelectronic material. The raw materials of the ITO target are tin oxide and indium oxide, and indium oxide is prepared from indium metal. Indium metal is a precious metal with a high price, and its content in nature is very scarce. It is estimated that only 15,000 tons of indium can be obtained in the world. However, the utilization rate of ITO targets during sputtering is low, genera...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B58/00C22B7/00
CPCC22B58/00C22B7/005Y02P10/20
Inventor 崔恒丁金铎葛春桥柳春锡金志洸王梦涵
Owner 中山智隆新材料科技有限公司
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