Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor package and method of manufacturing the same

A technology of semiconductors and conductive wires, which is applied in the field of semiconductor packaging and its manufacturing, and can solve problems such as interference, reducing the distance between input and output terminals, etc.

Pending Publication Date: 2020-12-29
SAMSUNG ELECTRONICS CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, in a highly integrated semiconductor chip having an increased number of input and output (I / O) terminals, the interval between the input and output terminals can be reduced, so that interference may occur between the input and output terminals

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor package and method of manufacturing the same
  • Semiconductor package and method of manufacturing the same
  • Semiconductor package and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Hereinafter, example embodiments of the inventive concepts will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used for the same elements, and redundant descriptions thereof will be omitted.

[0019] figure 1 is a cross-sectional view illustrating a semiconductor package 10 according to an example embodiment of the inventive concepts. figure 2 According to an example embodiment of the inventive concept figure 1 An enlarged cross-sectional view of region "II".

[0020] refer to figure 1 and figure 2 The semiconductor package 10 may include a redistribution structure 100 , a semiconductor chip 200 disposed on an upper side of the redistribution structure 100 , and a lower electrode pad 150 disposed on a lower side of the redistribution structure 100 .

[0021] The redistribution structure 100 may include a redistribution insulating layer 110 and a plurality of redistribution patterns 120 , 130 an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention discloses a semiconductor package. A semiconductor package includes a redistribution structure including a redistribution insulating layer and a redistribution pattern, a semiconductor chip provided on a first surface of the redistribution insulation layer and electrically connected to the redistribution pattern, and a lower electrode pad provided on a second surface oppositeto the first surface of the redistribution insulating layer, the lower electrode pad including a first portion embedded in the redistribution insulating layer and a second portion protruding from thesecond surface of the redistribution insulating layer, wherein a thickness of the first portion of the lower electrode pad is greater than a thickness of the second portion of the lower electrode pad.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of priority of Korean Patent Application No. 10-2019-0078341 filed in the Korean Intellectual Property Office on June 28, 2019, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0003] The inventive concept relates to a semiconductor package and a method of manufacturing the same, and more particularly, to a fan-out semiconductor package and a method of manufacturing the fan-out semiconductor package. For example, the present disclosure relates to methods and devices for fan-out wafer-level packaging (FOWLP). Background technique [0004] Recently, since the demand for portable devices is rapidly increasing in the electronic product market, miniaturization and light weight of electronic components mounted in these electronic products have been required. For the miniaturization and weight reduction of electronic components, it is advantage...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L21/56H01L25/065H01L23/488H01L23/485H01L21/60
CPCH01L25/0657H01L23/3128H01L21/56H01L24/02H01L24/03H01L24/13H01L24/81H01L2224/0231H01L2224/02331H01L2224/02379H01L2224/02381H01L2224/02373H01L2224/031H01L2224/13008H01L2224/81192H01L2224/812H01L2924/18161H01L2924/15174H01L23/49822H01L23/49816H01L23/49811H01L25/105H01L2224/83001H01L2224/81001H01L2224/16225H01L2224/73204H01L2224/32225H01L2924/15311H01L2225/1058H01L24/16H01L24/29H01L24/73H01L24/83H01L2224/13101H01L2224/1411H01L2224/2919H01L2224/73253H01L2224/83101H01L2224/92125H01L2924/07802H01L2924/181H01L2221/68345H01L21/6835H01L21/568H01L21/561H01L2924/0665H01L2924/00014H01L2924/014H01L2924/00012H01L2924/00H01L23/525H01L23/528H01L24/06H01L23/5226H01L23/485H01L23/481H01L23/31H01L23/49827H01L2224/0603H01L21/76823H01L25/0655H01L2224/0233H01L2224/02333
Inventor 金钟润朴正镐李锡贤张延镐张在权
Owner SAMSUNG ELECTRONICS CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com