Self-calibration power electronic device temperature coefficient calibration method
A technology of power electronic devices and temperature coefficient, which is applied in the direction of single semiconductor device testing, instrumentation, measuring electricity, etc., can solve the problems of poor accuracy and achieve the effect of improving accuracy
Inactive Publication Date: 2021-01-01
华电(烟台)功率半导体技术研究院有限公司
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[0005] The purpose of the present invention is to overcome the problem of poor accuracy of traditional calibration methods, and propose a new self-calibration calibration method, based on multi-current measurement results to reversely calculate the junction temperature. The technical solution adopted is:
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Embodiment 1
[0024] Embodiment 1, a temperature coefficient calibration method for self-calibration of 3300V500A high-voltage high-power IGBT devices:
[0025] 1) Put the IGBT device on the heating plate, raise the temperature of the heating plate to the maximum junction temperature of the device 150°C, and obtain the temperature coefficient calibration curve according to the traditional calibration method under different measurement currents, such as figure 1 shown. During the natural temperature drop of the heating plate, the voltage across the collector-emitter (CE) and the shell temperature of the IGBT are recorded. The voltage across the CE is measured by a voltage measuring instrument, and the shell temperature is measured by a thermocouple.
[0026] 150°C is the maximum junction temperature of this type of IGBT device. In order to ensure the measurement accuracy of the junction temperature, the calibration experiment needs to be carried out within the full range of the IGBT operati...
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The invention relates to the technical field of power electronic devices, in particular to a self-calibration power electronic device temperature coefficient calibration method, which does not need toenable the whole device to be in a temperature state through external heating and then measure the equivalent junction temperature of the shell temperature, but adopts multi-current measurement to reversely deduce the junction temperature, and finally establishes a temperature coefficient calibration method. The calibration method is based on the theoretical basis of the PN junction voltage dropmethod under the small current, so that the calibration method is only suitable for calibration of the PN junction voltage drop junction temperature measurement method under the small current, but themethod is suitable for all power electronic devices such as diodes, MOSFETs and IGBTs which can apply the junction temperature measurement method, a more accurate temperature coefficient calibrationcurve can be obtained, and the junction temperature measurement precision is improved.
Description
technical field [0001] The invention relates to the technical field of power electronic devices, in particular to a self-calibrating method for calibrating the temperature coefficient of power electronic devices. Background technique [0002] Power electronic devices are being widely used in DC power grids, electric locomotives and electric vehicles, etc., according to the research report on the reliability of power electronic systems, power electronic devices are the part with the highest failure rate in power electronic systems, about 34%. 55% of device failures are caused by temperature. It can be seen that accurate measurement of the junction temperature of power electronic devices is of great significance for improving the reliability of the entire power electronic system. [0003] The PN junction voltage drop method under small current is currently the most widely used junction temperature measurement method. As a temperature-sensitive electrical parameter method, it ...
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IPC IPC(8): G01R31/26G01R35/00
CPCG01R31/2619G01R35/005
Inventor 邓二平陈杰赵雨山王延浩黄永章
Owner 华电(烟台)功率半导体技术研究院有限公司