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Method and system for measuring intrinsic frequency of external cavity semiconductor laser by using FP cavity power spectrum

An eigenfrequency and semiconductor technology, which is applied in the field of measuring the eigenfrequency and system of external cavity semiconductor lasers with FP cavity power spectrum, can solve the problems of complex operation of the equipment and the inability to directly measure the eigenfrequency, so as to optimize the mechanical structure, Improve the overall stability and the effect of resonant frequency stability

Inactive Publication Date: 2021-01-05
BEIHANG UNIV
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Problems solved by technology

However, these methods cannot directly measure the eigenfrequency, and the equipment operation is more complicated

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  • Method and system for measuring intrinsic frequency of external cavity semiconductor laser by using FP cavity power spectrum

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Embodiment Construction

[0017] Below with the accompanying drawings ( figure 1 ) to illustrate the present invention.

[0018] figure 1 A schematic structural diagram of a system for measuring the eigenfrequency of an external cavity semiconductor laser by using FP cavity power spectrum to implement the present invention. refer to figure 1 A method for measuring the eigenfrequency of an external cavity semiconductor laser with a FP cavity power spectrum, comprising the following steps: Step 1, using the FP cavity frequency stabilization optical path to stabilize the frequency of the external cavity semiconductor laser 1 on the resonant frequency of the FP cavity 6, and using the The resonant frequency is a reference frequency; step 2, using a tunable radio frequency signal to excite the external cavity semiconductor laser 1, so that the external cavity semiconductor laser 1 produces a vibration modulation frequency; step 3, recording so that the vibration modulation frequency begins to deviate from...

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Abstract

The invention discloses a method and system for measuring the intrinsic frequency of an external cavity semiconductor laser by using an FP cavity power spectrum, which can visually obtain the intrinsic frequency of the external cavity semiconductor laser so as to optimize the mechanical structure of the external cavity semiconductor laser, and facilitate the design of an effective feedback systemin ultrahigh-sensitivity measurement so as to improve the overall stability.

Description

technical field [0001] The present invention relates to laser eigenfrequency measurement technology, in particular to a method and system for measuring eigenfrequency of external cavity semiconductor lasers with FP cavity power spectrum. The FP cavity is a Fabry-Perot cavity, also denoted as an F-P cavity. The eigenfrequency of the external cavity semiconductor laser can be directly obtained to optimize the mechanical structure of the external cavity semiconductor laser, which is beneficial to design an effective feedback system in ultra-high sensitivity measurement to improve the overall stability. Background technique [0002] Semiconductor lasers have come a long way since their inception. Because of its high efficiency, small size, simple structure, and easy tuning, it has been widely used in communication, medical, industrial, agricultural and other fields. However, general semiconductor lasers have large linewidth and high phase noise, which limits their application i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01M11/02H01S5/00
CPCG01M11/02H01S5/0014
Inventor 翟跃阳曹俐刘颖全伟段利红
Owner BEIHANG UNIV