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Forming method of metal interconnection structure

A metal interconnection structure and metal tungsten technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as semiconductor substrate grinding depressions, affecting device electrical performance, etc.

Pending Publication Date: 2021-01-08
NEXCHIP SEMICON CO LTD
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  • Claims
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Problems solved by technology

The tungsten plugs have a dense area of ​​tungsten plugs in the AA area of ​​the semiconductor substrate 10. Since the grinding speed of the tungsten plugs in this area is faster than that of the scattered areas of the tungsten plugs, this makes the tungsten plugs Under greater pressure, and during the grinding process, the removal rate of the interlayer dielectric layer 11 is faster than that of metal tungsten, which makes it easy to have the problem of grinding depressions in the semiconductor substrate where the tungsten plug-intensive region is formed.
The depression causes the problem of metal bridge a when the metal layer is subsequently formed on the tungsten plug, thus affecting the electrical performance of the device

Method used

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  • Forming method of metal interconnection structure
  • Forming method of metal interconnection structure
  • Forming method of metal interconnection structure

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Embodiment Construction

[0046] A method for forming a metal interconnection structure of the present invention will be further described in detail below. The invention will now be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it being understood that those skilled in the art may modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0047] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achie...

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Abstract

The invention provides a forming method of a metal interconnection structure. According to the forming method, through a nitrogen-carbon-silicon layer formed on a semiconductor substrate, a first grinding process and a second grinding process, the defect that a high-density region of a first through hole in the semiconductor substrate sinks is avoided, so that the problem of metal connection bridge when a metal layer is formed on the metal plug can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a method for forming a metal interconnection structure. Background technique [0002] In the semiconductor process, tungsten plugs can be formed on the semiconductor substrate according to different needs, so as to realize the electrical connection of the upper and lower metal layers. [0003] Such as figure 1 As shown, an interlayer dielectric layer 11 and a tungsten plug 12 are formed in the semiconductor substrate 10 of the metal interconnection structure, and the tungsten plug 12 is embedded in the interlayer dielectric layer 11, and in the interlayer dielectric layer 11 A low dielectric layer 13 is formed on the low dielectric layer 13, and a metal layer 14 is embedded in the low dielectric layer 13. The extending direction of the metal layer 14 is the same as the extending direction of the tungsten plug 12, and the metal layer 14 is located on the tung...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/76805H01L21/76877H01L21/76883
Inventor 张国伟吴佳特李武祥
Owner NEXCHIP SEMICON CO LTD
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