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A kind of preparation method of zinc gallate mesoporous nanosphere

A technology of zinc gallate and nanospheres, applied in the direction of nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of easy aggregation, uneven size of nanomaterials, low drug loading rate, etc., to achieve enhanced afterglow performance, The effect of high drug loading rate and broad application prospects

Active Publication Date: 2021-10-22
SICHUAN UNIV
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  • Abstract
  • Description
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Problems solved by technology

However, ZnGa 2 o 4 :Cr 3+ Nano drug loading system still faces the problem of low drug loading rate
On the other hand, ZnGa 2 o 4 :Cr 3+ The synthesis of nanomaterials requires high-temperature calcination to prepare outstanding afterglow performance, and the prepared ZnGa 2 o 4 :Cr 3+ The size of nanomaterials is uneven and easy to agglomerate in aqueous solution, these factors inevitably restrict the ZnGa 2 o 4 :Cr 3+ Application of nano-loaded drugs in vivo

Method used

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  • A kind of preparation method of zinc gallate mesoporous nanosphere
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example 1

[0021] a) Preparation of uniform nano-silicon spheres (MSN-1) with regular mesoporous pore structure (diameter about 130 nm, and mesopore diameter of 6.8 nm; b) Preparation of ion sources containing gallium nitrate, zinc nitrate and chromium nitrate The mixed solution and the stoichiometric ratio of Ga, Zn, Cr input amount is 1:2:0.0006; c) the mixed solution of MSN-1 and metal ion nitrate is mixed uniformly at a mass ratio of 50:1, d) at 800 o Calcined at high temperature for 3h to obtain ZnGa 2 o 4 :Cr 3+ -composite of MSN-1; e) NaOH solution (40% by mass) and ZnGa 2 o 4 :Cr 3+ The complex of -MSN-1 is in a mass ratio of 1:0.01 in a ratio of 40 o Stirring at C for 12 h, etching to remove MSN-1, and then obtaining raspberry-like mesoporous ZnGa 2 o 4 :Cr 3+ , Si 4+ nanospheres. The product SEM picture is as follows figure 1 A, the synthesis process is as follows figure 2 .

example 2

[0023] a) Preparation of uniform nano-silicon spheres (MSN-1) with regular mesoporous pore structure (diameter about 130 nm, and mesopore diameter of 6.8 nm; b) Preparation of ion sources containing gallium nitrate, zinc nitrate and chromium nitrate The mixed solution and the stoichiometric ratio of Ga, Zn, Cr input amount is 1:2:0.0006; c) the mixed solution of MSN-1 and metal ion nitrate is mixed uniformly at a mass ratio of 50:1, d) at 800 o Calcined at high temperature for 3h to obtain ZnGa 2 o 4 :Cr 3+ -composite of MSN-1; e) NaOH solution (40% by mass) and ZnGa 2 o 4 :Cr 3+ The complex of -MSN-1 is in a mass ratio of 1:0.1 in a ratio of 40 o Stirring at C for 12 h, etching to remove MSN-1, and then obtaining raspberry-like mesoporous ZnGa 2 o4 :Cr 3+ , Si 4+ nanospheres. The product SEM picture is as follows figure 1 b.

example 3

[0025] a) Preparation of uniform nano-silicon spheres (MSN-1) with regular mesoporous pore structure (diameter about 130 nm, and mesopore diameter of 6.8 nm; b) Preparation of ion sources containing gallium nitrate, zinc nitrate and chromium nitrate The mixed solution and the stoichiometric ratio of Ga, Zn, Cr input amount is 1:2:0.0006; c) the mixed solution of MSN-1 and metal ion nitrate is mixed uniformly at a mass ratio of 50:1, d) at 800 o Calcined at high temperature for 3h to obtain ZnGa 2 o 4 :Cr 3+ -composite of MSN-1; e) NaOH solution (40% by mass) and ZnGa 2 o 4 :Cr 3+ -The complex of MSN-1 is in a mass ratio of 1: 1 in a ratio of 40 o Stirring at C for 12 h, etching to remove MSN-1, and then obtaining raspberry-like mesoporous ZnGa 2 o 4 :Cr 3+ , Si 4+ nanospheres. The product SEM picture is as follows figure 1 c.

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Abstract

The invention discloses a method for preparing zinc gallate mesoporous nanospheres, belonging to the technical field of nanomaterials. The specific steps of the preparation method of the present invention include: using mesoporous silicon spheres (MSNs) with a regular pore structure as a hard template method, MSNs and a mixed solution composed of gallium nitrate, zinc nitrate and chromium nitrate in a certain proportion are ultrasonically mixed, and subjected to high temperature Calcination to obtain zinc gallate-MSNs composite, and then use a certain concentration of sodium hydroxide solution to etch to remove MSNs to obtain Cr 3+ and Si 4+ Co-doped zinc-gallate mesoporous nanospheres. The method described in the invention has good reproducibility and low cost, and the prepared zinc gallate mesoporous nanospheres have the characteristics of excellent near-infrared afterglow performance, large specific surface area, unique mesoporous morphology, adjustable size and the like.

Description

technical field [0001] The invention relates to a raspberry-shaped ZnGa based on silicon template-assisted-alkali etching technology 2 o 4 :Cr 3+ ,Si 4+ A method for preparing mesoporous nanospheres belongs to the technical field of nanomaterials. Background technique [0002] The long afterglow phenomenon refers to a special optical phenomenon that can continue to emit light for several minutes, hours or even days after the high-energy excitation (such as X-rays, ultraviolet rays, etc.) stops. With the rapid development of biological imaging technology in recent years, long afterglow luminescent materials have attracted more and more researchers' attention, especially near-infrared long afterglow nanomaterials whose luminescence band is located in the transparent window of biological imaging. Chromium-doped zinc gallate (ZnGa 2 o 4 :Cr 3+ ) as the representative of the third-generation near-infrared long-lived luminescent nanomaterials, after entering the body, due t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00C09K11/68A61K47/69A61K49/00B82Y30/00B82Y40/00
CPCA61K49/0013A61K49/0089A61K47/6923B82Y30/00B82Y40/00C01G15/00C01P2004/32C01P2004/62C01P2006/12C01P2006/16C09K11/68
Inventor 吕弋冯洋宋红杰
Owner SICHUAN UNIV
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