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Equivalent LET calculation method for pulse laser single event effect test

A single event effect, pulsed laser technology, applied in measuring devices, instruments, measuring electricity and other directions to achieve the effect of expanding engineering applications

Pending Publication Date: 2021-01-15
LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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  • Abstract
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Problems solved by technology

[0005] The main purpose of this application is to propose a method for calculating the equivalent LET of pulsed laser energy based on quantitative analysis of deposited charges for the equivalent problem of pulsed laser energy and heavy ion LET in pulsed laser single event effect experiments

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Embodiment Construction

[0025] In order to enable those skilled in the art to better understand the solution of the application, the technical solution of the application will be clearly and completely described below in conjunction with the embodiments of the application. Obviously, the described embodiments are only part of the embodiments of the application , but not all examples. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of this application.

[0026] It should be noted that the terms "first" and "second" in the specification and claims of the present application are used to distinguish similar objects, but not necessarily used to describe a specific order or sequence. It should be understood that the data so used are interchangeable under appropriate circumstances for the embodiments of the application described herein. Furthermore, the terms "comprising" and...

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Abstract

The invention discloses an equivalent LET calculation method for a pulse laser single event effect test. The calculation method comprises the following steps: calculating deposition charge QL generated when pulse laser enters a device according to the fact that the single event effect caused by the pulse laser and heavy ions to the device is equivalent when the charge quantities deposited by the pulse laser and the heavy ions in the sensitive volume of the device are equal, and obtaining the sensitive depth z of the device through a pulse laser test, wherein the pulse laser equivalent LET is LETL[MeV.cm<2> / mg] = (Ep / rho) * QL[pC] / z [mu]m]. According to the invention, equivalent evaluation of single event effect radiation harm of pulse laser and heavy ions to the device is realized, and application of the pulse laser in the aspect of satellite anti-radiation reinforcement technology is further expanded.

Description

technical field [0001] This application relates to the field of space radiation effect and reinforcement technology, in particular, it relates to an equivalent LET calculation method for pulsed laser single event effect test. Background technique [0002] Compared with the heavy ion test, the pulsed laser has the advantages of low cost, easy repeated operation, and no radiation hazard, and has gradually become a favorable substitute for the single event effect heavy ion test. Studies have shown that pulsed lasers can induce single-event effects through single-photon absorption (SPA) and two-photon absorption (TPA), and obtain spatial and temporal information characterizing the characteristics of single-event effects. The parameters of the evaluation of the anti-single event effect of the existing devices are all based on the heavy ion test. How to equivalent the test results of the pulsed laser to the results of the heavy ion test, so that the results of the pulsed laser can...

Claims

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Application Information

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IPC IPC(8): G01R31/00
CPCG01R31/00Y02E60/00
Inventor 安恒王鹢李得天张晨光文轩杨生胜秦晓刚曹洲常思远
Owner LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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