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A data output drive circuit and non-volatile flash memory

A technology for outputting drive circuits and data, which is applied in the field of circuits and can solve problems such as increased peak current and increased data readout power consumption

Active Publication Date: 2021-04-16
XTX TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a data output driving circuit and a non-volatile flash memory, aiming at solving the problem that in the existing data output driving circuit, the NMOS transistor and the PMOS transistor are turned on at the same time to form a pass-through current, which causes the total peak current of the driving transistor The problem of increased power consumption and increased power consumption during data readout

Method used

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  • A data output drive circuit and non-volatile flash memory
  • A data output drive circuit and non-volatile flash memory
  • A data output drive circuit and non-volatile flash memory

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Embodiment Construction

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0024] It should ...

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Abstract

The invention discloses a data output drive circuit and a non-volatile flash memory. By optimizing the pre-drive module, the gate voltage and opening degree of the PMOS drive tube and the NMOS drive tube change asynchronously when the data is reversed, but realize A non-overlapping sequence. When the PMOS driver is turned on, the gate voltage of the NMOS driver is close to 0V, and the NMOS driver is turned off; when the NMOS driver is turned on, the gate voltage of the PMOS driver is already close to the power supply voltage, and the PMOS driver The tube is turned off, avoiding the simultaneous opening of the PMOS drive tube and the NMOS drive tube to form a pass-through current, and solving the problem of the simultaneous opening of the PMOS drive tube and the NMOS drive tube to form a pass-through current, which causes the total peak current of the drive tube to increase and the data to be read. out the problem of increased power consumption.

Description

technical field [0001] The invention relates to the technical field of circuits, in particular to a data output driving circuit and a nonvolatile flash memory. Background technique [0002] In the existing data output drive circuit, when the output data is flipped from 1 to 0 or from 0 to 1, the NMOS tube and PMOS tube as the drive tube will be turned on for a period of time to form a pass-through current, resulting in a charging current and a discharging current. At the same time, it causes an increase in the total peak current of the drive tube and an increase in power consumption during data readout, such as figure 1 shown. [0003] Therefore, the existing technology still needs to be improved and developed. Contents of the invention [0004] The purpose of the present invention is to provide a data output driving circuit and a non-volatile flash memory, aiming at solving the problem that in the existing data output driving circuit, the NMOS transistor and the PMOS tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26G11C16/30G11C7/10
CPCG11C7/1051G11C16/26G11C16/30
Inventor 徐明揆王小光唐维强刘梦吴彤彤
Owner XTX TECH INC