Manufacturing method of semiconductor device, and semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve problems such as crosstalk, and achieve the effects of reducing interference, improving effectiveness and reliability

Inactive Publication Date: 2021-01-22
YANGTZE MEMORY TECH CO LTD
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this creat

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of semiconductor device, and semiconductor device
  • Manufacturing method of semiconductor device, and semiconductor device
  • Manufacturing method of semiconductor device, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0062]The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work shall fall within the protection scope of the present invention.

[0063]It should be understood that although the terms first, second, etc. may be used herein to describe various components, these components should not be limited by these terms. These terms are used to distinguish one component from another. For example, the first component may be referred to as the second component, and similarly, the second component may be referred to as the first component without departing from the scope of the present invention.

[0064]It shoul...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a manufacturing methodfor a semiconductor device, and a semiconductor device. The method comprises the following steps: firstly forming a channel hole with a groove, then forming a blocking layer in the channel hole, and then forming charge trapping layers on the inner surface of the blocking layer in the groove, wherein the first charge trapping layes are separated in a first longitudinal direction. The separated charge trapping layers can effectively prevent stored charges from diffusing among a plurality of storage units, so interference among the storage units is reduced, and the effectiveness and reliability of reading and writing of the semiconductor device can be further improved.

Description

technical field [0001] The present invention generally relates to the field of semiconductors, and in particular, relates to a method for manufacturing a semiconductor device and the semiconductor device. Background technique [0002] NAND storage devices are non-volatile storage products with low power consumption, light weight and good performance, and are widely used in electronic products. The planar NAND device is close to the limit of actual expansion. In order to further increase the storage capacity and reduce the storage cost per bit, 3D NAND memory is proposed. In the 3D NAND memory structure, a stacked memory structure is realized by vertically stacking multiple layers of data storage units. [0003] To increase the storage density of 3D NAND flash memory by vertically stacking a larger number of memory cells, as the aspect ratio of the channel hole increases, it will cause manufacturing problems in the process, such as the non-uniformity of the channel hole and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/1157H01L27/11582
CPCH10B43/35H10B43/27
Inventor 高庭庭薛磊刘小欣耿万波
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap