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IGBT overcurrent early warning system and method

An early warning system and overcurrent technology, applied in the field of semiconductors, can solve problems to be improved, and achieve the effects of increasing reliability, accurate protection thresholds, and solving low reliability.

Active Publication Date: 2021-01-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the accuracy of the detection method needs to be improved

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  • IGBT overcurrent early warning system and method
  • IGBT overcurrent early warning system and method
  • IGBT overcurrent early warning system and method

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Embodiment Construction

[0043] The specific embodiments of the present invention are described below so that those skilled in the art can understand the present invention, but it should be clear that the present invention is not limited to the scope of the specific embodiments. For those of ordinary skill in the art, as long as various changes Within the spirit and scope of the present invention defined and determined by the appended claims, these changes are obvious, and all inventions and creations using the concept of the present invention are included in the protection list.

[0044] Such as figure 1 As shown, the IGBT overcurrent warning system includes a drive module, an IGBT with the same specification as the target IGBT, a temperature acquisition module, a voltage acquisition module, and a signal processing and control module; the drive module is respectively connected to the IGBT with the same specification as the target IGBT and the signal processing and A control module, an IGBT of the sam...

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Abstract

The invention discloses an IGBT overcurrent early warning system and method. The system comprises a driving module, an IGBT with the same specification as a target IGBT, a temperature acquisition module, a voltage acquisition module and a signal processing and control module. The driving module is connected with the IGBT with the same specification as the target IGBT and the signal processing andcontrol module respectively, and the IGBT with the same specification as the target IGBT is connected with the temperature acquisition module and the voltage acquisition module; and the temperature acquisition module and the voltage acquisition module are respectively connected with the signal processing and control module. According to the invention, the influence of temperature and aging on theIGBT is combined, and a new protection threshold determination method is established, so that the protection threshold of the IGBT at any moment is more accurate, the problem of low reliability of anexisting early warning method is solved, and the reliability of the IGBT in work can be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an IGBT overcurrent warning system and method. Background technique [0002] Insulated gate bipolar transistor (IGBT) is a power semiconductor switching device, which is widely used in medium and large power equipment. It improves the reliability of power electronic systems to a certain extent, and can effectively prevent power electronic systems from malfunctioning About 42% of the switches used in power electronic systems are IGBTs. [0003] At the same time, power semiconductor devices are also the most vulnerable components in power electronic converters. About 34% of power electronic system failures are caused by chip or welding failures of power electronic devices. If real-time and effective maintenance measures cannot be taken quickly, it may be Cause serious consequences and huge economic losses. [0004] The IGBT driving circuit usually monitors Vce (the voltage between t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/261G01R31/2642
Inventor 伍伟古湧乾陈勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA