Ge-Sb-based phase change material and multistage phase change memory

Abstract

The invention discloses aGe-Sb-based phase change storage material whose general chemical formula is (GeiSbj)100-kXk, i, j and k are element percentages of Ge, Sb and X respectively, i is greater than0 and less than or equal to 50, j is greater than or equal to 50 and less than 100, k is greater than 0 and less than 100, and i + j is equal to 100; X is dissolved in Sb, the crystalline state of the GeSb-based phase change storage material can be changed under the condition of temperature rise or electric pulse application, Ge, Sb and X are distributed uniformly and form a solid solution together to correspond to a first resistance state when the Ge-Sb-based phase change storage material is crystallized for the first time, and when the Ge-Sb-based phase change storage material is crystallized for the second time or even more times later, Ge, Sb and X are non-uniformly distributed to form Sb-enriched or Ge-enriched or X-enriched regions, and the enriched regions enable the resistance state to be further reduced to generate third or more resistance states, so that the Ge-Sb-based phase change storage material is suitable for multi-stage storage; in addition, the material is relativelyhigh in amorphous and crystalline resistance, relatively high in thermal stability, relatively high in accuracy when being used for storage and wide in application range.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a Ge-Sb-based phase-change memory material and a multi-level phase-change memory. Background technique [0002] Phase change memory (PCRAM) is a new type of non-volatile memory. The data storage of phase change memory is based on the fast reversible phase transition between the amorphous state and the crystalline state of the phase change material. The reversible phase change of the phase change material in the phase change memory is realized by electric pulse, so that the transition of the phase change material from the amorphous state to the crystalline state becomes the SET operation, and the transition of the phase change material from the crystalline state to the amorphous state becomes the RESET operation . Generally, phase change materials have higher resistivity in the amorphous state and lower resistivity in the crystalline state, and the resis...

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Problems solved by technology

[0004] In view of the above defects or improvement needs of the prior art, the present invention provides a Ge-Sb based phase-change storage material and a multi-level phase-change memory, the purpose of which is to solve the technical problem that the prior art cannot realize effective multi-level storage

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