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Preparation method of high-quality tungsten-titanium sputtering target material

A sputtering target, high-quality technology, applied in sputtering coating, metal material coating process, vacuum evaporation coating and other directions, can solve the problem of low purity of tungsten titanium target, uneven microstructure, poor thickness uniformity, etc. problems, to facilitate industrial mass production, meet the needs of high-end targets, and achieve the effect of high density

Inactive Publication Date: 2021-02-23
丰联科光电(洛阳)股份有限公司
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This technology combines two processes: Cold Isosteric Pressing Process with Hot Stirring Sintered Layer; A combination of these techniques results in improved quality Titanium targets that have specific structures such as ununiform microstructure, finer particles, higher purities at lower costs compared to traditional methods like vacuum fusion methodologies used during manufacturing. These technical benefits make it possible to produce highly pure and dense ceramics without expensive equipment while also meeting requirements from advanced electron device coatings fields where demand has increased over time.

Problems solved by technology

This patents describes methods commonly known within the industry that produce highly pure, dense, small particles with good crystal structure throughout tantalum metal alloys. These technical problem addressed through these techniques include improving the efficiency at depositing thin films onto substrates like magnetic discs or PVC plastic panels while maintaining consistency across different sizes of the final product.

Method used

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  • Preparation method of high-quality tungsten-titanium sputtering target material
  • Preparation method of high-quality tungsten-titanium sputtering target material
  • Preparation method of high-quality tungsten-titanium sputtering target material

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preparation example Construction

[0035] A method for preparing a high-quality tungsten-titanium sputtering target, comprising the steps of:

[0036] 1.) Select tungsten powder and titanium powder, and mix them according to their mass ratio to obtain tungsten-titanium mixed powder; in this step, the purity of tungsten powder is preferably ≥99.95%, and the purity of titanium powder is preferably ≥99.95%, and the mixture is mixed to obtain tungsten In the titanium mixed powder, according to the mass percentage, the titanium powder is 8%~12%, and the rest is tungsten powder. And it is preferred that the tungsten powder and titanium powder pass through a 200-mesh sieve before the proportioning and mixing. Tungsten powder and titanium powder can be mixed in a V-shaped mixer in an argon atmosphere, and the mixing time is preferably 10~16h.

[0037] 2) Put the tungsten-titanium mixed powder obtained in step 1) into the rubber sleeve mold, after sealing the rubber sleeve mold, take a solid shot of the mold to ensure ...

Embodiment 1

[0061] 1.) Select tungsten powder and titanium powder, and mix them according to their mass ratio to obtain tungsten-titanium mixed powder: select tungsten powder and titanium powder with a purity ≥ 99.95%, and sieve them (usually use a 200-mesh sieve), sieve In addition to agglomerated particles, it is convenient for the tungsten powder and titanium powder to be fully mixed. Then mix tungsten powder and titanium powder according to the mass percentage of 90% tungsten powder and 10% titanium powder, and put the mixed powder into V-type mixer for mixing. Before starting the V-type mixer, argon protection was introduced to ensure that the argon pressure in the V-type mixer was positive. The powder mixing time in this embodiment was 14 hours.

[0062] 2) Put the tungsten-titanium mixed powder obtained in step 1) into the rubber sleeve mold, such as figure 1 shown. In this embodiment, the rubber sleeve mold 1 is cylindrical, and the upper end of the rubber sleeve mold 1 has a po...

Embodiment 2

[0075] 1.) Select tungsten powder and titanium powder, and mix them according to their mass ratio to obtain tungsten-titanium mixed powder: select tungsten powder and titanium powder with a purity ≥ 99.95%, and sieve them (usually use a 200-mesh sieve), sieve In addition to agglomerated particles, it is convenient for the tungsten powder and titanium powder to be fully mixed. Then, according to the mass percentage of tungsten powder 88% and titanium powder 12%, the tungsten powder and titanium powder are mixed, and the mixed powder after mixing is put into a V-shaped mixer for mixing. Before starting the V-type mixer, argon protection is introduced to ensure that the argon pressure in the V-type mixer is positive. The powder mixing time of this embodiment is 10 hours.

[0076] 2) Put the tungsten-titanium mixed powder obtained in step 1) into the rubber sleeve mold, such as figure 1 shown. In this embodiment, the rubber sleeve mold 1 is cylindrical, and the upper end of the ...

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Abstract

The invention provides a preparation method of a high-quality tungsten-titanium sputtering target material. According to the preparation method, a cold isostatic pressing treatment process and a hot isostatic pressing sintering process are combined; a staged heat preservation and pressure maintaining process is adopted in the hot isostatic pressing sintering process; the procedures are simple; theoperation is easy; the prepared tungsten-titanium target material is uniform in structure, fine in grain and high in purity; the density is greater than or equal to 99%; consequently, the demand forthe use in the field of high-end electronic product film-coating can be completely met; and furthermore, the production cost is low and the industrial batch production is convenient, so that the high-end target material demand can be met. The process of the preparation method is particularly suitable for the industrial large-batch production of high-quality tungsten-titanium circular sputtering target materials.

Description

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Claims

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Application Information

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Owner 丰联科光电(洛阳)股份有限公司
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