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Film structure reproduction method and reproduction film structure

A structure and film-forming technology, applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problems of high durability, high price, and difficult powdering of SiC parts

Pending Publication Date: 2021-02-23
ADMAP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with cheap Si parts, SiC parts are less prone to powdering and have higher durability but are more expensive

Method used

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  • Film structure reproduction method and reproduction film structure
  • Film structure reproduction method and reproduction film structure
  • Film structure reproduction method and reproduction film structure

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no. 1 approach

[0030] Hereinafter, as an example of the film formation structure according to the embodiment, the focus ring 10 which is a SiC member used to support a wafer (not shown) during the plasma etching process is exemplified. The focus ring 10 is a support member interposed between the lower electrode and the wafer in the chamber during plasma etching. Therefore, at least a counterbore (step 12 ) for mounting a wafer and a through hole 14 for inserting an electrostatic chuck are provided in the focus ring 10 . It should be noted that the shape of the focus ring 10 is not limited, but in Figure 1 to Figure 4 In the example shown, it becomes a so-called donut shape.

[0031] In the focus ring 10 having such a structure, the surface on which the wafer is placed (active surface 10 a ) is eroded by the plasma and damaged (corroded) due to the influence of the plasma etching process. The damage on the active surface 10a is not uniform, but as figure 1 As shown in the cross-sectional ...

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Abstract

A method of easily reproducing a film structure with low cost and a reproduction film structure manufactured using the same, the film structure reproduction method includes: a new film layer deposition step of depositing a new SiC layer on a non-active surface (10b) opposite to a damaged active surface (10a); and an active surface (10a) fabrication step of fabricating the active surface to obtaina focus ring (10).

Description

technical field [0001] The present invention relates to the regeneration of a structure composed of a film formed of SiC, a regeneration method suitable for reducing the regeneration cost of these film formed structure, and a regenerated structure. Background technique [0002] When semiconductor manufacturing is performed by plasma etching or the like, SiC components (jigs, etc.) installed in a manufacturing chamber are affected by plasma etching, and part of their surfaces are corroded (damaged). Compared with cheap Si parts, SiC parts are less prone to pulverization and have higher durability but are more expensive. Therefore, studies have been made to reduce running costs when using SiC parts by regenerating damaged SiC parts, and techniques disclosed in Patent Document 1 and Patent Document 2 have been proposed. [0003] Both of the techniques disclosed in Patent Documents 1 and 2 are to laminate a new SiC layer by CVD (Chemical Vapor Deposition: chemical vapor phase g...

Claims

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Application Information

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IPC IPC(8): H01L21/3065
CPCH01L21/3065H01J37/32642H01J37/32495C23C16/325C23C16/458C23C16/4404
Inventor 中村将基
Owner ADMAP
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