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Semiconductor device

A semiconductor and device technology, which is applied in the field of semiconductor devices and can solve the problems of reduced insulation withstand voltage of semiconductor devices, etc.

Active Publication Date: 2021-02-23
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since these wires are close to insulating components, it is possible to reduce the insulation withstand voltage of the semiconductor device

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach 〕

[0040] based on Figure 1 to Figure 20 , the semiconductor device A10 according to the first embodiment of the present invention will be described. The semiconductor device A10 includes a conductive support member 1, a control element 41, a drive element 42, an insulating element 50, a plurality of first wires 61, a plurality of second wires 62, a plurality of third wires 63, a plurality of fourth wires 64, and a sealing Resin 70. The conductive support member 1 includes a first lead 10 , a second lead 20 , a third lead 31 , a fourth lead 32 , a plurality of fifth leads 33 , and a plurality of sixth leads 34 . here, figure 2 The sealing resin 70 is seen through for easy understanding. figure 2 The see-through sealing resin 70 is shown by a phantom line (two-dot chain line). Figure 14 and Figure 15 is along figure 2 A cross-sectional view shown with a dotted line. Figure 17 Indicates the upper surface of the insulating layer 52 (described later) that is the 11th la...

no. 2 Embodiment approach 〕

[0136] based on Figure 22 to Figure 25 , the semiconductor device A20 according to the second embodiment of the present invention will be described. In these figures, the same reference numerals are assigned to the same or similar elements as those of the semiconductor device A10 already described above, and redundant descriptions will be omitted. here, Figure 22 For ease of understanding, the sealing resin 70 is seen through. Figure 22 In the figure, the transparent sealing resin 70 is shown by a phantom line (two-dot chain line).

[0137] In the semiconductor device A20, the structures of the third lead 31, the fourth lead 32, the plurality of fifth leads 33, and the plurality of sixth leads 34 are different from those of the semiconductor device A10 described above.

[0138] like Figure 22 and Figure 23 As shown, the third pad portion 311 of the third lead 31 has a third pad curved edge 311C. The third pad curved side 311C is located adjacent to the first gate ma...

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Abstract

This semiconductor device is provided with a conductive support member, a control element, an insulation element, a drive element and a sealing resin. The conductive support member comprises a first lead and a second lead. The first lead has a first pad part. The second lead has a second pad part. The second pad part is positioned next to the first pad part in a first direction that is perpendicular to the thickness direction of the first pad part. The control element is mounted on the first pad part. The insulation element is mounted on the first pad part, and is electrically connected to thecontrol element. The drive element is mounted on the second pad part, and is electrically connected to the insulation element. The sealing resin covers the first pad part, the second pad part, the control element, the insulation element and the drive element. When viewed from the thickness direction, the first pad part has a first edge which is positioned next to the second pad part in the firstdirection, and which extends in a second direction that is perpendicular to both the thickness direction and the first direction. The first edge has a first end that is positioned at one end in the second direction and a second end that is positioned at the other end in the second direction. When viewed from the thickness direction, the second pad part has a second edge which is positioned next tothe first edge in the first direction, and which extends in the second direction. The second edge has a third end that is positioned at one end in the second direction and a fourth end that is positioned at the other end in the second direction. In the second direction, either the third end or the fourth end is positioned between the first end and the second end.

Description

technical field [0001] The present invention relates to a semiconductor device having a control element and a drive element, and an insulating element conducting to both of these elements. Background technique [0002] Semiconductor devices (gate drivers) for driving switching elements such as IGBTs or MOSFETs are well known. An example of a semiconductor device is disclosed in Patent Document 1, which includes: a driving element that outputs a gate voltage for driving a switching element; a control element that transmits an electrical signal that becomes the basis of the gate voltage to the driving element; and the driving element. An insulating element that conducts with the control element. [0003] The insulating element of the semiconductor device includes a pair of coils (inductors). The electric signal transmitted from the control unit is converted into magnetic force by one coil. The other coil converts an electric signal having a higher potential difference than ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/50H01L23/28H01L25/07H01L25/18
CPCH01L2224/06H01L2224/73265H01L2924/181H01L2224/48247H01L2224/32245H01L2224/48137H01L2224/05H01L2224/02166H01L2224/05554H01L23/3107H01L23/544H01L2223/54426H01L2223/54486H01L23/49562H01L23/49575H01L23/49506H01L23/49548H01L2924/00012H01L2924/00H01L23/5227H01L24/05H01L24/32H01L24/48H01L24/73H01L25/0655H01L2224/48245
Inventor 菊地登茂平
Owner ROHM CO LTD