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Etching method, micro OLED and preparation method thereof

A secondary etching and production process technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as insufficient glue thickness, large angle, and inability to meet etching requirements

Pending Publication Date: 2021-03-09
ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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Problems solved by technology

[0002] In today's OLED industry, F-based gases are basically used for dielectric etching. However, in the case of high-precision yellow photoresists, the PR of the dielectric film and insulating layer is not very thick, and the selection of F-based PR for PR is relatively low. When etching thicker dielectrics or deep trench dielectrics, the thickness of the glue is often not enough, and the angle after etching is too large, and the cathode is easy to break after OLED deposition, which cannot meet the etching requirements.

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  • Etching method, micro OLED and preparation method thereof
  • Etching method, micro OLED and preparation method thereof
  • Etching method, micro OLED and preparation method thereof

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Embodiment Construction

[0021] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0022] In the present invention, unless stated otherwise, the orientation words included in the term such as "up, down, left, and right" only represent the orientation of the term in the normal use state, or the common name understood by those skilled in the art, rather than should be considered a limitation of the term.

[0023] figure 1 It is an etching method in a micro OLED production process provided by the present invention, such as figure 1 As shown, the etching method in the micro OLED production process includes:

[0024] S101, obtaining the semi-finished product 1 after depositing the dielectric film layer 2 on the silicon base substrate, the struct...

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Abstract

The invention discloses an etching method, a micro OLED and a preparation method of the micro OLED. The etching method in a micro OLED production process comprises the steps of obtaining a semi-finished product after a dielectric film layer is deposited on a silicon-based substrate; putting the semi-finished product into an etching machine, introducing Cl-based gas to carry out primary etching, and then introducing F-based gas to carry out secondary etching until the etching angle of the dielectric film layer is equal to a preset angle. According to the invention, the angle of the etched medium can be reduced, and the color gamut and the yield of the OLED are improved.

Description

technical field [0001] The invention relates to the field of micro-OLED production technology, in particular to an etching method, a micro-OLED and a preparation method thereof. Background technique [0002] In today's OLED industry, F-based gases are basically used for dielectric etching. However, in the case of high-precision yellow photoresists, the PR of the dielectric film and insulating layer is not very thick, and the selection of F-based for PR is relatively low. When etching thicker dielectrics or deep trench dielectrics, the thickness of the glue is often not enough, and the angle after etching is too large, and the cathode is easy to break after OLED deposition, which cannot meet the etching requirements. Contents of the invention [0003] The object of the present invention is to provide an etching method, a micro OLED and a preparation method thereof, which can reduce the angle of the medium after etching, and improve the OLED color gamut and yield. [0004] ...

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Application Information

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IPC IPC(8): H01L21/3065H01L25/16H01L25/00
CPCH01L21/3065H01L25/167H01L25/50
Inventor 乔程
Owner ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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