A kind of cleaning method after gallium oxide wafer cmp

Abstract

This application relates to the technical field of semiconductor manufacturing, and specifically discloses a cleaning method for a gallium oxide wafer after CMP. The method is: S1, cleaning the gallium oxide wafer after CMP with cleaning solution I containing sulfuric acid, hydrogen peroxide and deionized water, and then cleaning with deionized water; S2, cleaning with cleaning solution II containing ammonia water, hydrogen peroxide and deionized water S1 cleans the gallium oxide wafer, and then cleans it with deionized water; S3, cleans the gallium oxide wafer after S2 cleaning with cleaning solution III containing hydrofluoric acid and deionized water, and then cleans it with deionized water; S4, cleans it with deionized water containing The cleaning solution of hydrochloric acid, hydrogen peroxide and deionized water IV cleans the gallium oxide wafer after cleaning in S3, and then cleans it with deionized water; S5, ultrasonically cleans the gallium oxide wafer after cleaning S4 under the environment of ultrasonic power of 150-300w.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and more specifically, it relates to a cleaning method of a gallium oxide wafer after CMP. Background technique [0002] CMP (Chemical Mechanical Polishing,) is chemical mechanical polishing. It is a polishing method that combines chemical corrosion and mechanical polishing. It uses chemicals to form an easily removable active layer on the surface of the wafer. The friction caused by the high pressure and relative rotation speed removes the active layer to planarize the wafer surface. The equipment and consumables involved in the CMP process include: polishing machine, polishing slurry, polishing pad and post-CMP cleaning equipment, etc. Due to the chemical reaction at the interface of the polishing sheet and the existence of abrasive particles, surface defects and contamination will inevitably be introduced in the CMP process, so after the global planarization of t...

AI Technical Summary

Problems solved by technology

However, mechanical cleaning is only suitable for cleaning hard wafers such as tungsten. For soft wafers such as gallium oxide, if cleaning with a brush, the bristles of the brush are likely to cause scratches on the surface of gallium oxide and damage the gallium oxide wafer.

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