A kind of plasma etching machine and etching method thereof

Abstract

The invention discloses a plasma etching machine and an etching method thereof in the technical field of plasma etching machines, including a casing, and an ionization box is fixedly connected to the top of the casing; the invention utilizes intermittent gears and T-shaped teeth The plate engagement makes it drive the wafer rack to flip 180° through the flip shaft. At this time, the operation of changing the side of the wafer is realized, and then the double-sided etching of the wafer is realized, and the whole process does not need to open the device to take out the wafer, avoiding It solves the problem that when the device is opened to take out the wafer, the external small debris enters the interior of the equipment and affects the internal vacuum environment. The process operation is simple and fast, and it avoids the damage to the etched wafer surface caused by manual operation. Problem, at the same time, when the electric push rod moves upward, it will automatically release the limit on the wafer frame, and when the electric push rod moves downward, the limit plate will slowly limit the wafer frame.

Description

technical field [0001] The invention relates to the technical field of plasma etching machines, in particular to a plasma etching machine and an etching method thereof. Background technique [0002] In the manufacturing process of semiconductor integrated circuits, etching is one of the most important procedures, among which plasma etching is one of the commonly used etching methods. Usually etching takes place in a vacuum reaction chamber, the wafer is placed on the base in the vacuum reaction chamber, radio frequency is applied to the electrode on the top of the base, and the reactive gas is introduced to form a plasma in the vacuum reaction chamber to the wafer. For processing. [0003] In the invention case of a plasma etching machine and its etching method disclosed in the prior art, the invention patent application number is the Chinese patent of 201910800375.9. The plasma processing system includes a reaction chamber and a Faraday on the reaction chamber. A shieldin...

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Problems solved by technology

[0006] The object of the present invention is to provide a kind of plasma etching machine and its etching method, to solve the prior art proposed in the above-mentioned background art when etching a wafer, only one side can be etched. When it is necessary to etch the wafer on both sides, it is necessary to manually take out the etched wafer on one side, turn it over to the other side and put it into the etching equipment. This process is complex and prone to damage the etched wafer. When the wafer surface is opened at the same time to take out the wafer, the external small debris enters the interior of the equipment and affects the internal vacuum environment.

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